丝印代码：120N06LS；60V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON), VGS@10V, ID@20A

Silicon N-Channel Power MOSFET

General Description： CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system min

丝印代码：GS120N06SL；60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in T

丝印代码：FIR120N06P；N-Channel Enhancement Mode Power Mosfet

文件：3.99502 Mbytes Page：7 Pages

60V N-Channel Trench MOSFET

文件：592.88 Kbytes Page：7 Pages

OptiMOS Power-Transistor

文件：743.11 Kbytes Page：10 Pages