丝印代码：10N06；N-Channel MOSFET

文件：716 Kbytes Page：5 Pages

丝印代码：10N06；N-Channel Enhancement Mode Power MOSFET

文件：322.26 Kbytes Page：4 Pages

丝印代码：10N06AT；60V N-Channel DTMOS

文件：790.93 Kbytes Page：7 Pages

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

Description The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in h

Discrete Diodes

文件：127.42 Kbytes Page：1 Pages

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件：126.87 Kbytes Page：11 Pages