Cool MOS™ Power Transistor

Feature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance\n• Pb-free lead plating; RoHS compliant\n• Qualified according to JEDEC0) for target applications

丝印代码：D2PAK；N-Channel 650 V (D-S) MOSFET

文件：1.71683 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70191 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70195 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.70167 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

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N CHANNEL ENHANCEMENT MODE

文件：701.78 Kbytes Page：6 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.69052 Mbytes Page：8 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.68505 Mbytes Page：8 Pages

Power MOSFET

文件：1.67706 Mbytes Page：8 Pages

丝印代码：D2PAK；N-Channel 650 V (D-S) MOSFET

文件：1.71684 Mbytes Page：8 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.71684 Mbytes Page：8 Pages

Power MOSFET

文件：1.67706 Mbytes Page：8 Pages

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：397.15 Kbytes Page：13 Pages

N CHANNEL ENHANCEMENT MODE

文件：701.78 Kbytes Page：6 Pages