MOSFET - Power, Single N-Channel 100 V, 13.6 m, 52 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

丝印代码：TBD；MOSFET - Power, Single N-Channel 100 V, 13.6 m, 52 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

N-Channel MOSFET uses advanced SGT technology

文件：1.64761 Mbytes Page：5 Pages

N-Channel MOSFET uses advanced SGT technology

文件：577.33 Kbytes Page：4 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.51887 Mbytes Page：5 Pages