丝印代码：0101；P-Channel Enhancement Mode Power MOSFET

Features ⚫ Fast switching ⚫ Low gate charge and RDS(on) ⚫ VDS= -100V,ID= -1A RDS(on)

丝印代码：0101；20 V, 0.5 A low VF MEGA Schottky barrier rectifier

1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 F

丝印代码：0101；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast

丝印代码：0101；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast

丝印代码：0101；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =0.87A RDS(ON)

丝印代码：010100；45 V, 500 mA PNP general-purpose transistors

Features and benefits * General-purpose transistor * Two current gain selections * Low package height of 0.37 mm * AEC-Q101 qualified

丝印代码：010101；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

丝印代码：010101；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

丝印代码：010111；50 V, 500 mA PNP resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

丝印代码：010111；50 V, 500 mA PNP resistor-equipped transistors

1.1 General description PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1 R2 Pac

丝印代码：010110；50 V, 500 mA NPN resistor-equipped transistors

General description NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 500 mA output current capability ■ Reduced pick and place costs ■ Built

丝印代码：010110；50 V, 500 mA NPN resistor-equipped transistors

Features and benefits  500 mA output current capability  Built-in bias resistors   10 resistor ratio tolerance  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of sold

丝印代码：01011010；60 V, 100 mA PNP general-purpose transistor

文件：664.49 Kbytes Page：12 Pages

丝印代码：01010111；60 V, N-channel Trench MOSFET

文件：727.78 Kbytes Page：16 Pages

丝印代码：010101；50 V, 500 mA PNP resistor-equipped transistors

文件：3.67682 Mbytes Page：23 Pages

丝印代码：010111；50 V, 500 mA PNP resistor-equipped transistors

文件：3.67682 Mbytes Page：23 Pages

丝印代码：01010110；30 V, P-channel Trench MOSFET

文件：709.21 Kbytes Page：15 Pages

丝印代码：01010000；20 V, N-channel Trench MOSFET

文件：715.75 Kbytes Page：15 Pages

丝印代码：01010001；30 V, N-channel Trench MOSFET

文件：724.49 Kbytes Page：14 Pages

丝印代码：01010100；30 V, N-channel Trench MOSFET

文件：710.43 Kbytes Page：14 Pages

丝印代码：01010101；30 V, N-channel Trench MOSFET

文件：712.5 Kbytes Page：15 Pages

丝印代码：01011000；20 V, N-channel Trench MOSFET

文件：721.44 Kbytes Page：14 Pages

丝印代码：01011110；20 V, N-channel Trench MOSFET

文件：727.72 Kbytes Page：15 Pages

丝印代码：01011001；20 V, P-channel Trench MOSFET

文件：718.47 Kbytes Page：14 Pages

丝印代码：01011111；20 V, P-channel Trench MOSFET

文件：725.55 Kbytes Page：15 Pages

SWITCH MODULE – DC LINE

> High DC switching capacity > Variety of applications > Wide DC voltage range > Simple connection

SWITCH MODULE – DC LINE

> High DC switching capacity > Variety of applications > Wide DC voltage range > Simple connection

SWITCH MODULE – DC LINE

> High DC switching capacity > Variety of applications > Wide DC voltage range > Simple connection

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

ELECTRONIC THERMOSTAT – DC LINE

> High DC switching capacity > Adjustable temperature > Small hysteresis > Optical operating display (LED) > Integrated switch module > Precise measurement via an external sensor

ELECTRONIC THERMOSTAT – DC LINE

> High DC switching capacity > Adjustable temperature > Small hysteresis > Optical operating display (LED) > Integrated switch module > Precise measurement via an external sensor

ELECTRONIC THERMOSTAT – DC LINE

> High DC switching capacity > Adjustable temperature > Small hysteresis > Optical operating display (LED) > Integrated switch module > Precise measurement via an external sensor

ELECTRONIC THERMOSTAT – DC LINE

> High DC switching capacity > Adjustable temperature > Small hysteresis > Optical operating display (LED) > Integrated switch module > Precise measurement via an external sensor

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

ELECTRONIC HYGROSTAT – DC LINE

> High DC switching capacity > Adjustable humidity > Small hysteresis > Optical operating display (LED) > Integrated switch module > Precise measurement via an external sensor

ELECTRONIC HYGROSTAT – DC LINE

> High DC switching capacity > Adjustable humidity > Small hysteresis > Optical operating display (LED) > Integrated switch module > Precise measurement via an external sensor

ELECTRONIC HYGROSTAT – DC LINE

> High DC switching capacity > Adjustable humidity > Small hysteresis > Optical operating display (LED) > Integrated switch module > Precise measurement via an external sensor

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)

X5R Dielectric

GENERAL DESCRIPTION • General Purpose Dielectric for Ceramic Capacitors • EIA Class II Dielectric • Temperature variation of capacitance is within ±15% from -55°C to +85°C • Well suited for decoupling and filtering applications • Available in High Capacitance values (up to 100μF)