1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Trench MOSFET technology

• Low threshold voltage

• Very fast switching

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

• Ultra thin package profile of 0.37 mm

3. Applications

• Relay driver

• High-speed line driver

• Low-side loadswitch

• Switching circuits