型号 功能描述 生产厂家&企业 LOGO 操作
STP8NM60

N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET

Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP8NM60

N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET

Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP8NM60

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=8A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapplic

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
STP8NM60

N-channel650V@Tjmax,0.9Ω,8AMDmesh™PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK

Description TheMDmesh™isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH™ horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
STP8NM60

N-channel650V@Tjmax,0.9廓,8AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK

文件:561.24 Kbytes Page:18 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL600V-0.9廓-8A-TO-220/D2PAKFastDiodeMDmesh??PowerMOSFET

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters Generalfeatures ■Highdv/dtandavalanchecapabilities

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL600V-0.9ohm-8ATO-220/TO-220FP/DPAK/IPAKMDmesh??PowerMOSFET

Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL650VTjmax-0.9ohm-8ATO-220/FP/D/IPAK/D2PAKSTripFETIIMOSFET

Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultipledrainprocesswiththecompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadopt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=8A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingapplic

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel650V@Tjmax,0.9Ω,8AMDmesh™PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK

Description TheMDmesh™isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH™ horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel600V-0.56廓-7A-TO-220-TO-220FP-IPAK-DPAKsecondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesimplementssecondgenerationMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchingappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-channel600V,0.59,7A,FDmeshIIPowerMOSFET

Description TheFDmesh™IIseriesbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutandassociatesalladvantagesofreducedonresistanceandfastswitchingwithanintrinsicfastrecoverybody

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-Channel650V(D-S)PowerMOSFET

文件:1.10919 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-channel650V@Tjmax,0.9廓,8AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK

文件:561.24 Kbytes Page:18 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-channel600V,0.56廓,7AMDmesh??IIPowerMOSFETTO-220,TO-220FP,IPAK,DPAK,D2PAK

文件:706.65 Kbytes Page:19 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-Channel650V(D-S)PowerMOSFET

文件:1.10767 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

8.0A,600VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC8NM60isahighvoltagesuperjunctionMOSFET andisdesignedtohavebettercharacteristics,suchasfast switchingtime,lowgatecharge,lowon-stateresistanceandhave ahighruggedavalanchecharacteristics.ThispowerMOSFETis usuallyusedathighspeedswitching

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-channel650V@Tjmax,0.9Ω,8AMDmesh™PowerMOSFETTO-220,TO-220FP,D2PAK,DPAK,IPAK

Description TheMDmesh™isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH™ horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-Channel650V(D-S)PowerMOSFET

文件:1.10575 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)PowerMOSFET

文件:1.10714 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel650V(D-S)PowerMOSFET

文件:1.10581 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

STP8NM60产品属性

  • 类型

    描述

  • 型号

    STP8NM60

  • 功能描述

    MOSFET N-Ch 600 Volt 8 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-14 11:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
isc
2024
TO-220
1000
国产品牌isc,可替代原装
原装STM
21+
TO-220
35200
一级代理/放心采购
23+
N/A
36400
正品授权货源可靠
ST/意法
22+/23+
TO-220
9800
原装进口公司现货假一赔百
ST
2020+
TO-220
31210
公司代理品牌,原装现货超低价清仓!
ST
17+
TO-220
20000
原装现货热卖
ST/意法
23+
TO-220
30000
全新原装现货,价格优势
ST/意法
2024+实力库存
TO-220
339
只做原厂渠道 可追溯货源
ST
2015+
TO220A
12500
全新原装,现货库存长期供应
ST/意法
TO-220
265209
假一罚十,原包原标签,常备现货

STP8NM60芯片相关品牌

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  • Rubycon
  • SANYOU
  • SENSORTECHNICS
  • Xicor

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