位置：首页 > IC中文资料第312页 > STP16NE06L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP16NE06L | N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL60V-0.07ohm-16ADPAK/IPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL60V-0.07ohm-16A-DPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STP16NE06L产品属性
- 类型
描述
- 型号
STP16NE06L
- 功能描述
MOSFET TO-220 N-CH 60V 16A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST-意法半导体 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
ST |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST |
2021+ |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
S |
22+ |
TO220AB |
25000 |
只做原装进口现货,专注配单 |
|||
ADI |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
ST全系列 |
22+23+ |
TO-220F |
26268 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
22+ |
TO-220 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
ST |
23+ |
TO220 |
6000 |
原装,可配单 |
|||
ST意法半导体 |
22+21+ |
TO-220 |
3000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
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STP16NE06L规格书下载地址
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