位置：首页 > IC中文资料第109页 > STD16NE06L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STD16NE06L | N-CHANNEL60V-0.07ohm-16A-DPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
N-CHANNEL60V-0.07ohm-16ADPAK/IPAKSTripFETPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL60V-0.07ohm-16A-TO-251STripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-Channel60V(D-S)MOSFET 文件：963.88 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel60V(D-S)MOSFET 文件：1.00642 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
STD16NE06L产品属性
- 类型
描述
- 型号
STD16NE06L
- 功能描述
MOSFET N-Ch 60 Volt 16 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-252 |
8795 |
||||
STC |
2020+ |
DIP |
16800 |
绝对原装进口现货,假一赔十,价格优势! |
|||
ST |
TO-252 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/意法 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
STM |
23+ |
NA |
1425 |
专做原装正品,假一罚百! |
|||
ST |
2023+ |
TO-252 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
ST |
23+ |
TO252 |
6996 |
只做原装正品现货 |
|||
ST/意法 |
TO252 |
7906200 |
|||||
ST |
22+ |
TO-252 |
30000 |
原装正品 |
|||
ST |
23+ |
SOT-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
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STD16NE06L规格书下载地址
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