| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFETPowerMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent LowTrrandSoftDiodeRecovery HighPerformanceOptimisedAnti-parallelDiode Application | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
IRFPS35N50L FEATURES •SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-f | VishayVishay Siliconix 威世科技 |  | | |
IRFPS35N50L FEATURES •SuperFastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-f | VishayVishay Siliconix 威世科技 | | | |
SMPSMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •MoldingepoxiesmeetUL94V-0flammabilityclassification •LowRDS(on)HDMOSTMprocess •UnclampedInductiveSwitching(UIS)rated •Fastintrinsicrectifi | IXYS IXYS Integrated Circuits Division |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
TO-247 |
6528 |
房间原装进口现货假一赔十 |
|||
IR |
23+ |
SUPER-247 |
35890 |
||||
IR |
23+ |
TO247 |
8653 |
全新原装优势 |
|||
IR/VISH |
21+ |
65230 |
|||||
IR |
22+ |
TO-247 |
4500 |
全新原装品牌专营 |
|||
IR |
2022 |
TO247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IR |
2020+ |
TO-3P |
350000 |
100%进口原装正品公司现货库存 |
|||
IR国际整流器 |
22+23+ |
TO-247 |
25232 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
23+ |
TO-247 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
Vishay Siliconix |
23+ |
TO274AA |
9000 |
原装正品，支持实单 |
SQA35N50芯片相关品牌
SQA35N50规格书下载地址
SQA35N50参数引脚图相关
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- SQA-0180-06-SMA-02
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SQA35N50数据表相关新闻
SQ4532AEY-T1_BE3
进口代理
2023-4-19SQJ461EP-T1-GE3
进口代理
2022-10-8SQJ479EP-T1 场效应管(MOSFET) P沟道 80V 32A
SQJ479EP-T1
2022-5-13SQ2361ES场效应管 MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
原装正品假一罚十
2022-4-26SQ4942EY-T1-GE3
SQ4942EY-T1-GE3
2021-10-20SQJ459EP-T1_GE3
SQJ459EP-T1_GE3
2020-10-29
DdatasheetPDF页码索引
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