位置：首页 > IC中文资料 > NTHL040N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTHL040N120SC1 | SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTHL040N120SC1 | SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
NTHL040N120SC1 | MOSFET-SiCPower,SingleN-Channel1200V,40m,60A 文件：242.9 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,40m,60A 文件：249.91 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??N?륝hannel,SiliconCarbide1200V,40m 文件：223.46 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
22+ |
TO-247 |
1800 |
原厂原装,价格优势!13246658303 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
onsemi(安森美) |
23+ |
TO-247 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON(安森美) |
6000 |
||||||
FSC |
23+ |
原厂原封 |
5850 |
订货1周 原装正品 |
|||
ON-安森美 |
24+25+/26+27+ |
TO-247-3 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
onsemi |
23+ |
TO-247-3 |
4170 |
确保原装正品,一站式配单-认准水星电子。 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
NTHL040N120SC1芯片相关品牌
NTHL040N120SC1规格书下载地址
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DdatasheetPDF页码索引
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