位置：首页 > IC中文资料 > NTBG040N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBG040N120SC1 | SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTBG040N120SC1 | SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
NTBG040N120SC1 | MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,40m,60A 文件：249.91 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??N?륝hannel,SiliconCarbide1200V,40m 文件：223.46 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
24+ |
D2PAK-7 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
onsemi(安森美) |
23+ |
D2PAK7 |
6000 |
||||
ON2 |
23+ |
原厂原封 |
800 |
订货1周 原装正品 |
|||
onsemi |
22+/23+ |
TO-263-8,DPak(7 引线+接片) |
9800 |
原装进口公司现货假一赔百 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi(安森美) |
23+ |
D2PAK-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON(安森美) |
22+ |
600 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
||||
onsemi |
23+ |
D2PAK-7 |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
ONN |
23+ |
N/A |
1000 |
全新原装亏本出13157115792 |
|||
onsemi |
23+ |
D2PAK-7 |
1816 |
确保原装正品,一站式配单-认准水星电子。 |
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NTBG040N120SC1规格书下载地址
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NTBG040N120SC1数据表相关新闻
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DdatasheetPDF页码索引
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