位置：首页 > IC中文资料第5155页 > NP84
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP84N03KUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentapplications. FEATURES •Channeltemperature175degreerating •Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=42A) •LowCiss:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=5.2mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4410pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP84产品属性
- 类型
描述
- 型号
NP84
- 制造商
Hubbell Wiring Device-Kellems
- 功能描述
WALLPLATE, 4-G, 4) DUP, BR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
||||
NEC |
6000 |
面议 |
19 |
TO-220AB |
|||
NEC |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
23+ |
NA/ |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
22+ |
TO-262 |
15000 |
原装现货假一赔十 |
|||
NEC-日本电气 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEC |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
|||
NEC |
08+(pbfree) |
TO-220AB |
8866 |
||||
NEC |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
NEC |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
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NP84数据表相关新闻
NOVATEK
公司原装现货
2022-4-14NP16N06QLK-E1-AY 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP16N06QLK-E1-AY 类别分立半导体产品晶体管-FET，MOSFET-阵列 制造商RenesasElectronicsAmericaInc 封装：8-PowerL
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只做原装正品，欢迎咨询。
2020-7-16NPA-730B-005D
板机接口压力传感器
2019-9-10
DdatasheetPDF页码索引
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