位置：首页 > IC中文资料第11706页 > NP84N055CHE
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP84N055CHE | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP84N055CHE | MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET 文件：306.92 Kbytes Page：12 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP84N055CHE产品属性
- 类型
描述
- 型号
NP84N055CHE
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
VB |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
||||
NEC |
6000 |
面议 |
19 |
TO-220AB |
|||
NEC-日本电气 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
R |
23+ |
TO-TO-220 |
37650 |
全新原装真实库存含13点增值税票! |
|||
NEC |
08+(pbfree) |
TO-220AB |
8866 |
||||
NEC |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
NEC |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
NEC ELECTRONICS |
2023+ |
SMD |
906 |
安罗世纪电子只做原装正品货 |
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NP84N055CHE规格书下载地址
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DdatasheetPDF页码索引
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