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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP84N055DHE | MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP84N055DHE | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET 文件：306.92 Kbytes Page：12 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=7.3mΩMAX.(VGS=10V,ID=42A) •Lowinputcapacitance Ciss=4540pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID=42A) RDS(on)3=9.4mΩMAX.(VGS=4.5V,ID=42A) •Lowinputcapacitance Ciss=6 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.7mΩMAX.(VGS=5V,ID= | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP84N055DHE产品属性
- 类型
描述
- 型号
NP84N055DHE
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 84A I(D) | TO-262AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
I2PAK/TO-262 |
150 |
国产品牌isc,可替代原装 |
|||
23+ |
N/A |
90350 |
正品授权货源可靠 |
||||
RENESAS/瑞萨 |
TO-263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NEC |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
79999 |
||||
FAIRCHILD/仙童 |
23+ |
TO-251(IPAK) |
69820 |
终端可以免费供样,支持BOM配单! |
|||
原厂 |
2020+ |
TO-263 |
20000 |
公司代理品牌,原装现货超低价清仓! |
|||
NEC |
23+ |
TO-262 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
NEC |
21+ |
SOT-263 |
10000 |
原装现货假一罚十 |
NP84N055DHE芯片相关品牌
NP84N055DHE规格书下载地址
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DdatasheetPDF页码索引
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