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NP100P06PDG价格
参考价格：￥19.2317
型号：NP100P06PDG-E1-AY 品牌：Renesas 备注：这里有NP100P06PDG多少钱，2024年最近7天走势，今日出价，今日竞价，NP100P06PDG批发/采购报价，NP100P06PDG行情走势销售排行榜，NP100P06PDG报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP100P06PDG | MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP100P06PDG | -60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
-60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：300.42 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：300.42 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：300.42 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
-60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP100P06PDG产品属性
- 类型
描述
- 型号
NP100P06PDG
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
1932+ |
TO-263 |
537 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
Renesas |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
20000 |
原装现货,可追溯原厂渠道 |
|||||
RENESAS/瑞萨 |
2048+ |
TO-263 |
9851 |
只做原装正品现货!或订货假一赔十! |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
Renesas(瑞萨) |
21+ |
A/N |
30000 |
专注品牌,只做原装,询价必回!!! |
|||
NEC |
23+ |
TO-252 |
9980 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
NEC |
2017+ |
TO-263 |
54789 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
RENESAS(瑞萨)/IDT |
23+ |
TO-263 |
8000 |
全新、原装 |
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NP100P06PDG规格书下载地址
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- NOTES:
- Notes
- Note:
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