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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP100P06PLG | MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP100P06PLG | -60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
-60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：299.08 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：299.08 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：299.08 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
-60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP100P06PLG产品属性
- 类型
描述
- 型号
NP100P06PLG
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
33500 |
全新原装真实库存含13点增值税票! |
|||
isc |
2024 |
D2PAK/TO-263 |
200 |
国产品牌isc,可替代原装 |
|||
RENESAS/瑞萨 |
TO-263 |
90000 |
公司集团化配单-有更多数量-免费送样-原包装正品现货- |
||||
23+ |
N/A |
85500 |
正品授权货源可靠 |
||||
Renesas |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
RENESAS/瑞萨 |
23+ |
5177 |
深圳现货 |
||||
NUTECH(诺泰) |
2021+ |
SO-8 |
499 |
||||
Renesas |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS/瑞萨 |
21+ |
TO263 |
10000 |
原装现货假一罚十 |
|||
NEC |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
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2020-7-16
DdatasheetPDF页码索引
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