位置：首页 > IC中文资料第6828页 > NESG204619
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG204619 | NECsNPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG204619 | NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NESG204619 | NPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL California Eastern Laboratories |  | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECsNPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECsNPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL California Eastern Laboratories | | | |
NPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION 文件：320.74 Kbytes Page：4 Pages | CEL California Eastern Laboratories | | |
NESG204619产品属性
- 类型
描述
- 型号
NESG204619
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-523 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
CEL |
17+ |
原厂原装 |
5000 |
原装正品 |
|||
CEL |
22+ |
SOT-523 |
354000 |
||||
NEC |
23+ |
SOT343 |
6000 |
原装正品，支持实单 |
|||
NEC |
21+ |
SOT343 |
13880 |
公司只售原装,支持实单 |
|||
NEC/Renesas Electronics Americ |
21+ |
SOT343 |
5000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
SOT-523 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
RENESAS/瑞萨 |
23+ |
SOT-23 |
89630 |
当天发货全新原装现货 |
|||
CEL |
2023+ |
SOT-523 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
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NESG204619规格书下载地址
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DdatasheetPDF页码索引
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