型号 功能描述 生产厂家&企业 LOGO 操作
NESG204619-T1-A

NECsNPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION

FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG204619-T1-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG204619-T1-A

NPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION

文件:320.74 Kbytes Page:4 Pages

CEL

California Eastern Laboratories

CEL

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NESG204619-T1-A产品属性

  • 类型

    描述

  • 型号

    NESG204619-T1-A

  • 功能描述

    射频硅锗晶体管 NPN Amp/Oscillator

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2024-6-6 15:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
CEL
19+
SOT-523
200000
CEL
20+
SOT-523
36800
原装优势主营型号-可开原型号增税票
RENESAS
19+
SOT343
87069
原厂代理渠道,每一颗芯片都可追溯原厂;
NEC
SOT343
893993
集团化配单-有更多数量-免费送样-原包装正品现货-正规
CEL
2023+
SOT-523
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEC
2008++
SOT-343SOT-323-4
87200
新进库存/原装
CEL
2310+
2013PB
15000
优势代理渠道,原装现货,可全系列订货
NEC
2020+
SOT343
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NEC
SOT343
265209
假一罚十原包原标签常备现货!

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