型号 功能描述 生产厂家&企业 LOGO 操作
NESG204619-T1

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINULTRASUPERMINIMOLD(19,1608PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,f=2GHz •Highbreakdownvoltagetechnology

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NECsNPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION

FEATURES •IDEALFORLOWNOISE,HIGH-GAINAMPLIFICATIONAPPLICATIONS: NF=0.8dBTYP.,Ga=11.0dBTYP.@VCE=1V,IC=3mA,F=2GHZ •HIGHBREAKDOWNVOLTAGETECHNOLOGYFORSIGETRANSISTORS: VCEO(ABSOLUTEMAXIMUMRATINGS)=5.0V •3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSiGeTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION

文件:320.74 Kbytes Page:4 Pages

CEL

California Eastern Laboratories

CEL

NESG204619-T1产品属性

  • 类型

    描述

  • 型号

    NESG204619-T1

  • 功能描述

    射频硅锗晶体管 NPN Amp/Oscillator

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2024-6-6 9:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
SOT343
6000
原装正品,支持实单
NEC
21+
SOT343
13880
公司只售原装,支持实单
CEL
22+
SOT-523
354000
CEL
2023+
SOT-523
18800
芯为科技只做原装
CEL
2310+
2013PB
15000
优势代理渠道,原装现货,可全系列订货
NEC
23+
SOT343
50000
全新原装正品现货,支持订货
NEC
SOT343
265209
假一罚十原包原标签常备现货!
NEC
24+23+
SOT343
12580
16年电子元件现货供应商 终端BOM表可配单提供样品
NEC
2020+
SOT-343
16800
绝对原装进口现货,假一赔十,价格优势!?
CEL
2022+
SOT-523
20000
只做原装进口现货.假一罚十

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