NDD价格

参考价格:¥3.8690

型号:NDD 品牌:Neutrik 备注:这里有NDD多少钱,2024年最近7天走势,今日出价,今日竞价,NDD批发/采购报价,NDD行情走势销售排行榜,NDD报价。
型号 功能描述 生产厂家&企业 LOGO 操作

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1.7A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES DrainCurrent-ID=2.6A@TC=25℃ DrainSourceVoltage-VDSS=500V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃)

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.9A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.9A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.7A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.7A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=100mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=100mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=150mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=150mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NITROGEN DIOXIDE DETECTOR

PRODUCTDESCRIPTION TheNDD5B1100nitrogendioxidedetectoruses asuperiorelectrochemicalsensorforreliability andaccuracyinthemostcriticalapplications.The NDD5B1100providesa3wiresourcing4-20mA outputaswellasanalarmrelaywiththreejumper selectabletriplevelsetting

GREYSTONE

Greystone Energy Systems Inc.

GREYSTONE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.36Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.745Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.745Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5.7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5.7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=0.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=0.8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel 650V (D-S) MOSFET

文件:1.08604 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel Power MOSFET 600 V, 8.5

文件:136.15 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel Power MOSFET 600 V, 8.5 ohm

文件:136.15 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel Power MOSFET 600 V, 8.5 ohm

文件:136.15 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel Power MOSFET 600 V, 8.5

文件:136.15 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel 650V (D-S)Power MOSFET

文件:1.08223 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel 650V (D-S) MOSFET

文件:1.08607 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel Power MOSFET 600 V, 8.5 ohm

文件:136.15 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel MOSFET uses advanced trench technology

文件:1.39517 Mbytes Page:5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

N-Channel Power MOSFET

文件:108.03 Kbytes Page:9 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel 650V (D-S) MOSFET

文件:1.08604 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel Power MOSFET

文件:108.03 Kbytes Page:9 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel Power MOSFET

文件:108.03 Kbytes Page:9 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel MOSFET uses advanced trench technology

文件:1.28082 Mbytes Page:5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

N-Channel Power MOSFET 600 V, 4.8 

文件:146.41 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel Power MOSFET 600 V, 4.0 

文件:168.55 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel Power MOSFET

文件:148.07 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

N-Channel 650V (D-S)Power MOSFET

文件:1.08208 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel Power MOSFET 600 V, 4.0 

文件:168.55 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NDD产品属性

  • 类型

    描述

  • 型号

    NDD

  • 功能描述

    XLR 连接器 DUMMYPLUG DIN - RUBBER

  • RoHS

  • 制造商

    Neutrik

  • 标准

    Standard XLR

  • 产品类型

    Connectors

  • 型式

    Female

  • 位置/触点数量

    3

  • 端接类型

    Solder

  • 安装风格

    Cable

  • 方向

    Vertical

更新时间:2024-5-15 17:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi/台湾微碧
21+
DPAK
5011
优势代理渠道,原装正品,可全系列订货开增值税票
ON/安森美
22+
DPAK-3
23313
VBSEMI
19+
DPAK
29600
绝对原装现货,价格优势!
VB
DPAK
68900
原包原标签100%进口原装常备现货!
ON-安森美
24+25+/26+27+
TO-251-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
VBsemi/台湾微碧
DPAK
399000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
O
23+
DPAK
6000
原装正品,支持实单
O
2020+
DPAK
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ON/安森美
2022+
TO-252
30000
进口原装现货供应,原装 假一罚十
ON/安森美
20+
TO-252
7500
现货很近!原厂很远!只做原装

NDD芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

NDD数据表相关新闻