位置：首页 > IC中文资料第6515页 > NAND01GR4B2B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND01GR4B2B | 1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 |  | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 | | |
NAND01GR4B2B产品属性
- 类型
描述
- 型号
NAND01GR4B2B
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
21+ |
TSSOP |
10000 |
原装现货假一罚十 |
|||
STM |
2023+ |
TSSOP48 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NUMONYX |
11+ |
BGA |
73 |
向鸿原装正品/代理渠道/现货优势 |
|||
ST |
20+ |
TSOP-48 |
25000 |
全新原装现货,假一赔十 |
|||
NUMONYX |
2016+ |
BGA |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
STM |
23+ |
TSSOP48 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
STM |
22+ |
TSSOP48 |
8700 |
原装现货 |
|||
ST/意法 |
23+ |
TSSOP48 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
23+ |
NA/ |
3379 |
原装现货,当天可交货,原型号开票 |
|||
NUMONYX |
BGA |
265209 |
假一罚十原包原标签常备现货! |
NAND01GR4B2B芯片相关品牌
NAND01GR4B2B规格书下载地址
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DdatasheetPDF页码索引
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