位置：首页 > IC中文资料第8549页 > NAND01GR4B2BN6E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND01GR4B2BN6E | 1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16 | NUMONYXNUMONYX 恒忆 |  |   |
NAND01GR4B2BN6E | 1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
NAND01GR4B2BN6E | 1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | |
1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory 文件：1.34162 Mbytes Page：60 Pages | NUMONYXNUMONYX 恒忆 | | |
NAND01GR4B2BN6E产品属性
- 类型
描述
- 型号
NAND01GR4B2BN6E
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NUMONYX |
2016+ |
BGA |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
2020+ |
TSOP-48 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST |
21+ |
BGA |
6000 |
全新原装 现货 价优 |
|||
STM |
2016+ |
TSSOP48 |
6523 |
只做原装正品现货!或订货! |
|||
ST/意法 |
21+ |
TSSOP48 |
6688 |
十年老店,原装正品 |
|||
ST |
TSSOP |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
Micron/Micron Technology Inc./ |
21+ |
TSSOP |
11600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
2022 |
TSSOP48 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
ST |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
STM |
2023+ |
TSSOP48 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
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