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位置：首页 > IC中文资料第1121页 > NAND01GR4B2C

型号 功能描述 生产厂家&企业 LOGO 操作
NAND01GR4B2C

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN5E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN5F

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN6F

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZA5E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZA5F

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZA6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZA6F

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZF5E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZF5F

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZF6E

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZF6F

1-Gbit,2112-byte/1056-wordpage,1.8V/3V,singlelevelcellNANDflashmemory

Features ■NANDinterface –x8orx16buswidth –Multiplexedaddress/data –Pinoutcompatibilityforalldensities ■Supplyvoltage:1.8V/3V ■Pagesize –x8device:(2048+64spare)bytes –x16device:(1024+32spare)words ■Blocksize –x8device:(128K+4Kspare)bytes –x16

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN1

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CN1E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CN1E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN1F

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CN1F

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CN6E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CN6E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN6F

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CN6F

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZA1

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZA1E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZA1E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZA1F

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZA1F

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZA6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZA6E

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZA6E

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZA6F

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZA6F

1-Gbit,2-Gbit,2112-byte/1056-wordpage,1.8V/3V,NANDflashmemory

文件：1.34162 Mbytes Page：60 Pages

NUMONYXNUMONYX

恒忆

NUMONYX
NAND01GR4B2CZB1

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2CZB6

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
NAND01GR4B2B

1Gbit,2Gbit,2112Byte/1056WordPage,1.8V/3V,NANDFlashMemory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS

NAND01GR4B2C产品属性

  • 类型

    描述

  • 型号

    NAND01GR4B2C

  • 制造商

    Micron Technology Inc

  • 功能描述

    NAND

  • 制造商

    Micron Technology Inc

  • 功能描述

    NAND - Gel-pak, waffle pack, wafer, diced wafer on film

NAND01GR4B2C供应商更多...

更新时间：2024-6-1 10:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市环球伟业电子有限公司
NAND01GW382CN6
Micron/Micron Technology Inc./
21+
TSSOP
11600
优势代理渠道,原装正品,可全系列订货开增值税票
询价
柒号芯城电子商务(深圳)有限公司
NAND01GW382CN6
STM
2023+
TSSOP48
700000
柒号芯城跟原厂的距离只有0.07公分
询价
深圳市澳亿芯电子科技有限公司
NAND01GW3826CN6
ST
10+
TSSOP
108
普通
询价
京海半导体(深圳)有限公司
NAND01GW382CN6
MICRON
21+
TSSOP
10000
原装现货假一罚十
询价
深圳市芯祺盛科技有限公司
NAND01GW382CZA6
NUMONYX
11+
BGA
73
向鸿原装正品/代理渠道/现货优势
询价
深圳市瑞浩芯科技有限公司
NAND01GW382CN6
ST
20+
TSOP-48
25000
全新原装现货,假一赔十
询价
深圳市瑞卓芯科技有限公司
NAND01GW382CZA6
ST/意法
22+
BGA
9000
原装正品
询价
深圳市天芯威科技有限公司
NAND01GW382CN6
ST
22+
TSOP-48
30000
原装正品
询价
深圳市能元时代电子有限公司
NAND01GW382CN6
STM
23+
TSSOP48
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市威雅利发展有限公司
NAND01GW382CN6
STM
1146+
TSSOP48
129
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价

NAND01GR4B2C芯片相关品牌

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NAND01GR4B2C规格书下载地址

NAND01GR4B2C参数引脚图相关

NAND01GR4B2C数据表相关新闻

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