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MWS价格
参考价格：￥0.3782
型号：MWS-1-01 品牌：RICHCO 备注：这里有MWS多少钱，2024年最近7天走势，今日出价，今日竞价，MWS批发/采购报价，MWS行情走势销售排行榜，MWS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MWS | Adustable Elastic Fabric(Standard Performance) 文件：324.21 Kbytes Page：1 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  |   |
MWS | High Voltage 文件：171.47 Kbytes Page：2 Pages | ILLINOISCAPACITORIllinois Capacitor, Inc. 伊利诺斯伊利诺斯电容器股份有限公司 |  | |
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One |  | | |
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One | | | |
20W Standard Package DESCRIPTION MWSDC/DCconvertersprovideupto20wattsofoutputpowerinanindustry-standardpackageandfootprint.TheMWSisavailableineither24Vor48Vinputversions.Withamaximumcasetemperatureof100°C,theMWSiswellsuitedforthemostdemandingtelecom,networking,andindustr | POWER-ONE Power-One | | | |
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
CMDA Power Amplifier DESCRIPTION TheMWSCDMAisahigh-efficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VCDMAandTDMAPCSbattery-power | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
InGaP HBT Gain Block DESCRIPTION Thisgeneralpurposeamplifierisalowcost,broadbandRFICmanufacturedwithanInGaP/GaAsHeterojunctionBipolarTransistor(HBT)process(MOCVD).ThisRFICamplifierwasdesignedasaneasilycascadable50ohmgainblock.Thedeviceisself-containedwith50ohminputandoutputi | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
CMDA Power Amplifier DESCRIPTION TheMWSCDMAisahigh-efficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VCDMAandTDMAPCSbattery-power | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
W-CMDA Power Amplifier DESCRIPTION TheMWSW-CDMAisahighefficiencylinearamplifiertargeting3Vmobilehandheldsystems.ThedeviceismanufacturedinanadvancedInGaP/GaAsHeterojunctionBipolarTransistor(HBT)RFICfabprocess.ItisdesignedforuseasafinalRFamplifierin3VW-CDMAandCDMA2000,spreadsp | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
256-Word x 4-Bit LSI Static RAM Description TheMWS5101andMWS5101Aare256wordby4-bitstaticrandomaccessmemoriesdesignedforuseinmemorysystemswherehighspeed,verylowoperatingcurrent,andsimplicityinusearedesirable.Theyhaveseparatedatainputsandoutputsandutilizeasinglepowersupplyof4Vto6.5V | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM Description TheMWS5114isa1024wordby4-bitstaticrandomaccessmemorythatusestheion-implantedsilicongatecomplementaryMOS(CMOS)technology.Itisdesignedforuseinmemorysystemswherelowpowerandsimplicityinusearedesirable.Thistypehascommondatainputanddataoutput | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 |  | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
MICRO WIRE SADDLE SLIGHTPROTRUSIONS MAYAPPEARONPARTS | EssentraEssentra Components 益升华益升华科技股份有限公司 | | | |
封装/外壳：径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TCO 250VAC 15A 130C (266F)RADIAL 电路保护 热熔断体（热熔保险丝和断路器） | Cantherm Cantherm - Cantherm |  | | |
封装/外壳：径向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TCO 250VAC 15A 143C (289F)RADIAL 电路保护 热熔断体（热熔保险丝和断路器） | Cantherm Cantherm - Cantherm | | | |
Adustable Elastic Fabric(Standard Performance) 文件：324.21 Kbytes Page：1 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
1024-Word x 4-Bit LSI Static RAM 文件：113.94 Kbytes Page：8 Pages | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High-speed 8-bit A/D Converters | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM) | NTENTE Electronics, Inc |  | |
MWS产品属性
- 类型
描述
- 型号
MWS
- 功能描述
防静电控制产品 WRIST STRAP ELASTIC BROWN ADJUSTABLE
- RoHS
否
- 制造商
3M Electronic Specialty
- 产品
Air Ionizers
- 类型
Mini
- 大小
4.5 in x 3.3 in x 2 in
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS |
2217+ |
DIP22 |
11739 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
原厂原包 |
2022+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
SUNLORD |
21+ |
610880 |
本公司只售原装 支持实单 |
||||
RICHCO |
21+ |
NA |
16049 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
INTERSIL |
22+ |
PDIP-18 |
4650 |
||||
23+ |
N/A |
13150 |
正品授权货源可靠 |
||||
SUNLORD/顺络 |
22+ |
SMD10x11.5x4.0mm |
12245 |
现货,原厂原装假一罚十! |
|||
Sunlord |
23+ |
IC芯片 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
IPD |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
RICHCO |
23+ |
NA |
12038 |
专做原装正品,假一罚百! |
MWS芯片相关品牌
MWS规格书下载地址
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- MSM4086
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MWS数据表相关新闻
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全新原装现货支持第三方机构验证
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深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-12-4MwT-1789原装现货
深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-12-4
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