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M29F200价格
参考价格：￥17.6698
型号：M29F200FB55N3E2 品牌：MIC 备注：这里有M29F200多少钱，2024年最近7天走势，今日出价，今日竞价，M29F200批发/采购报价，M29F200行情走势销售排行榜，M29F200报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F200 | 2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M29F200 | 2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M29F200产品属性
- 类型
描述
- 型号
M29F200
- 功能描述
闪存 RO 511-M29F200BB70M
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
07+ |
TSSOP-48 |
732 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STM |
2021+ |
TSOP48 |
6561 |
百分百原装正品 |
|||
STM |
2016+ |
TSOP48 |
6523 |
只做进口原装现货!假一赔十! |
|||
ST/意法 |
0446+ |
SOP44 |
51 |
原装正品 可含税交易 |
|||
MICRON |
21+ |
TSOP48 |
1141 |
全新原装,假一赔十! |
|||
MICRON/美光 |
2021+ |
TSOP48 |
9000 |
原装现货,随时欢迎询价 |
|||
MICRON/美光 |
21+ |
SOP |
7000 |
正品渠道现货,终端可提供BOM表配单。 |
|||
ST |
2021+ |
SOP44 |
5880 |
只做原装优势渠道可全系列订货开增值税票 |
|||
3000 |
公司存货 |
||||||
ST |
2020+ |
SOP44 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
M29F200芯片相关品牌
M29F200规格书下载地址
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M29F200数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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