型号 功能描述 生产厂家&企业 LOGO 操作
M29F200BB

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
M29F200BB

2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 2MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 2MBIT PARALLEL 48TSOP 集成电路(IC) 存储器

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2Megabit(256Kx8-Bit/128Kx16-Bit)CMOS5.0Volt-only,BootSectorFlashMemory

GENERALDESCRIPTION TheAm29F200Bisa2Mbit,5.0Volt-onlyFlashmemoryorganizedas262,144bytesor131,072words.The8bitsofdataappearonDQ0–DQ7;the16bitsonDQ0–DQ15.TheAm29F200Bisofferedin44-pinSOand48-pinTSOPpackages.ThedeviceisalsoavailableinKnownGoodDie(KGD

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

2Megabit(256Kx8-Bit/128Kx16-Bit)CMOS5.0Volt-only,BootSectorFlashMemory

GENERALDESCRIPTION TheAm29F200Aisa2Mbit,5.0Volt-onlyFlashmemoryorganizedas262,144bytesor131,072words.The8bitsofdataappearonDQ0–DQ7;the16bitsonDQ0–DQ15.TheAm29F200Aisofferedin44-pinSOand48-pinTSOPpackages.Thisdeviceisdesignedtobeprogrammedin-system

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

2Megabit(256Kx8-Bit/128Kx16-Bit)CMOS5.0Volt-only,BootSectorFlashMemory

文件:810.07 Kbytes Page:41 Pages

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

M29F200BB产品属性

  • 类型

    描述

  • 型号

    M29F200BB

  • 功能描述

    闪存 RO 511-M29F200BB70M

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2024-4-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST意法
21+
SOP
4550
全新原装现货
STM
2016+
TSOP48
4000
只做原装,假一罚十,公司可开17%增值税发票!
ST
23+
TSOP48
20000
全新原装假一赔十
ST/意法
2020+
NA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ST/意法
21+
SOP44
500
全新、原装
ST/意法
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ST
23+
TSOP48
16900
支持样品,原装现货,提供技术支持!
ST/意法
22+
TSOP
7688
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
STM
2022
TSOP
1950
全新原装现货
ST
1844+
SOP
6528
只做原装正品假一赔十为客户做到零风险!!

M29F200BB芯片相关品牌

  • ACT
  • AME
  • A-POWER
  • Balluff
  • CONEC
  • FESTO
  • Kingbright
  • MCNIX
  • PASTERNACK
  • RSG
  • SUNTSU
  • XPPOWER

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