位置：首页 > IC中文资料第80页 > M29F200B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F200B | 2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M29F200B产品属性
- 类型
描述
- 型号
M29F200B
- 功能描述
闪存 RO 511-M29F200BB70M
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron |
20+ |
48TSOP |
9000 |
||||
ST |
2021++ |
原厂原装 |
5850 |
ELE优势库存国外货源 |
|||
ST/意法 |
2021+ |
SOP44 |
71400 |
所有报价以当天为准 |
|||
ST/意法 |
2023+ |
TSOP48 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
ST |
21+ |
TSOP |
1950 |
原装现货 |
|||
ST |
22+ |
TSSOP |
6980 |
原装现货,可开13%税票 |
|||
ST/意法 |
21+ |
SOP44 |
7500 |
只做原装所有货源可以追溯原厂 |
|||
ST |
2021+ |
TSOP |
5018 |
原装正品假一罚十 |
|||
STM |
2016+ |
TSOP48 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
19+ |
9850 |
公司原装现货/随时可以发货 |
M29F200B芯片相关品牌
M29F200B规格书下载地址
M29F200B参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2D2025
- M2D1822
- M2D160
- M2BJ-BH
- M2BJ-B
- M2BC_15
- M2B_15
- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200BT45N1
- M29F200BT45M1
- M29F200BB90M3
- M29F200BB70N6T
- M29F200BB70N6F
- M29F200BB70N6E
- M29F200BB70N6
- M29F200BB70N3
- M29F200BB70N1T
- M29F200BB70N1
- M29F200BB70M6T
- M29F200BB70M6E
- M29F200BB70M6
- M29F200BB70M3
- M29F200BB70M1T
- M29F200BB70M1
- M29F200BB50N3
- M29F200BB50M3
- M29F200BB45N1
- M29F200BB45M1
- M29F200
- M29F160FT5AN6F2
- M29F160FT5AN6E2
- M29F160FT55N3F2 TR
- M29F160FT55N3F2
- M29F160FT55N3E2
- M29F160FB5AN6F2 TR
- M29F160FB5AN6F2
- M29F160FB5AN6E2
- M29F160FB55N3F2 TR
- M29F160FB55N3F2
- M29F160FB55N3E2
- M29F160BT70N1
- M29F160
- M29F102BB70N1
- M29F102BB45N1
- M29F102BB-45K1
- M29F102BB45K1
- M29F102BB35N1
- M29F102BB35K1
- M29F102B45K1
- M29F100T-90M1
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
M29F200B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
