IGBTLightspeedSeries

Features •Internationalstandardpackages JEDECTO-220ABandTO-263AA •Lowswitchinglosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersupplies(UPS) •Switch-modeandresonant-mod

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 1000V 30A 150W TO263AA 分立半导体产品 晶体管 - UGBT、MOSFET - 单

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily

Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc

N-ChannelEnhancementModeMOSFET

文件：218.84 Kbytes Page：4 Pages

N-ChannelEnhancementModeMOSFET

文件：233.38 Kbytes Page：4 Pages

N-ChannelEnhancementModeMOSFET

文件：238.58 Kbytes Page：4 Pages