型号 功能描述 生产厂家&企业 LOGO 操作
IXFX32N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IXFX32N50

HiPerFETPowerMOSFET

文件:37.44 Kbytes Page:2 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXYS

IXYS Integrated Circuits Division

IXYS

HiPerFETPowerMOSFETsQ-Class

文件:580.16 Kbytes Page:4 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

PowerMOSFET(Vdss=500V,Rds(on)typ.=0.135ohm,Id=32A)

SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRugg

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=500V,Rds(on)typ.=0.135ohm,Id=32A)

SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRugg

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HiPerFETPowerMOSFETsISOPLUS247

文件:92.65 Kbytes Page:4 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

HEXFET짰PowerMOSFET

文件:44.55 Kbytes Page:3 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:178.89 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IXFX32N50产品属性

  • 类型

    描述

  • 型号

    IXFX32N50

  • 功能描述

    MOSFET 32 Amps 500V 0.16 Rds

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-10 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
2020+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IXYS
09+
TO-247
930
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IXYS/艾赛斯
23+
TO-247MAX
6000
原装正品,支持实单
IXYS
2016+
TO-3P
6528
房间原装进口现货假一赔十
IXYS
23+
TO-3P
600
专做原装正品,假一罚百!
IXYS
23+
TO-247
67757
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS/艾赛斯
23+
NA/
30
优势代理渠道,原装正品,可全系列订货开增值税票
IXYS
2017+
TO-247
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
IXYS/艾赛斯
2022
TO-247
80000
原装现货,OEM渠道,欢迎咨询
magnachip
2023+
TO-247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品

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