型号 功能描述 生产厂家&企业 LOGO 操作
IXFV52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXYS
IXFV52N30P

PowerMOSFETs

文件:195.18 Kbytes Page:6 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXYS

PowerMOSFETs

文件:195.18 Kbytes Page:6 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

PowerMOSFETs

文件:195.18 Kbytes Page:6 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXYS

PolarHTTMHiPerFETPowerMOSFET

文件:97.5 Kbytes Page:5 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

PowerMOSFETs

文件:195.18 Kbytes Page:6 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

IXFV52N30P产品属性

  • 类型

    描述

  • 型号

    IXFV52N30P

  • 功能描述

    MOSFET 300V 52A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-24 17:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
23+
PLUS220SMD
10186
全新原装
IXYS
21+
TO2203 Short Tab
13880
公司只售原装,支持实单
IXYS
22+
TO2203 Short Tab
9000
原厂渠道,现货配单
IXYS-艾赛斯
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS/艾赛斯
22+
PLUS220
25000
只做原装进口现货,专注配单
IXYS/艾赛斯
23+
PLUS220
10000
公司只做原装正品
IXYS
23+
PLUSTO-220
12300
全新原装真实库存含13点增值税票!
IXYS
23+
TO-220-3
70781
##公司主营品牌长期供应100%原装现货可含税提供技术
IXYS
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十

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