位置：首页 > IC中文资料第10529页 > IXFV16N80P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFV16N80P | PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Integrated Circuits Division |  |   |
PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Integrated Circuits Division | | | |
PolarHVHiPerFETPowerMOSFETISOPLUS220 N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Integrated Circuits Division | | | |
PolarHVPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features FastRecoverydiode UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings | IXYS IXYS Integrated Circuits Division | | |
IXFV16N80P产品属性
- 类型
描述
- 型号
IXFV16N80P
- 功能描述
MOSFET 16 Amps 800V 0.6 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
20+ |
TO-220-3 |
90000 |
全新原装正品/库存充足 |
|||
IXYS |
22+ |
TO2203 Short Tab |
9000 |
原厂渠道,现货配单 |
|||
IXYS |
23+ |
SMD |
67040 |
原装正品实单可谈 库存现货 |
|||
IXYS |
21+ |
TO2203 Short Tab |
13880 |
公司只售原装,支持实单 |
|||
IXYS/艾赛斯 |
23+ |
PLUS220 |
6000 |
原装正品，支持实单 |
|||
IXYS |
23+ |
PLUSTO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS |
24+ |
PLUS220 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
IXFV16N80P芯片相关品牌
IXFV16N80P规格书下载地址
IXFV16N80P参数引脚图相关
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IXFV16N80P数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXOLAR?高效25％SolarMD模块SM111K04L
IXYS/Littelfuse的SolarMD模块非常适合为许多类型的电池供电或绿色电力产品充电
2019-9-17IXOLAR?高效25％SolarBIT太阳能电池KXOB25-12X1F
IXYS/Littelfuse的SolarBIT非常适合为许多类型的电池供电的电网产品充电
2019-9-17
DdatasheetPDF页码索引
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