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IXFN80N50P价格
参考价格：￥101.0906
型号：IXFN80N50P 品牌：IXYS 备注：这里有IXFN80N50P多少钱，2024年最近7天走势，今日出价，今日竞价，IXFN80N50P批发/采购报价，IXFN80N50P行情走势销售排行榜，IXFN80N50P报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFN80N50P | PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Fastintrinsicdiode •Internationalstandardpackage •UnclampedInductiveSwitching(UIS)rated •ULrecognized. •Isolatedmountingbase Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division |  |   |
HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductanc | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductanc | IXYS IXYS Integrated Circuits Division | | | |
HiPerFETPowerMOSFETsSingleDieMOSFET HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •F | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PolarHVHiPerFETPowerMOSFET 文件：235.65 Kbytes Page：5 Pages | IXYS IXYS Integrated Circuits Division | | |
IXFN80N50P产品属性
- 类型
描述
- 型号
IXFN80N50P
- 功能描述
MOSFET 500V 80A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
SOT-227B |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS |
21+ |
SOT2274 miniBLOC |
13880 |
公司只售原装,支持实单 |
|||
IXYS/艾赛斯 |
23+ |
SOT-227 |
32189 |
原装正品 华强现货 |
|||
IXYS/艾赛斯 |
2022 |
SOT227 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
IXYS |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
||||
IXYS |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
IXYS |
22+ |
SOT227 |
1788 |
全新原装亏本出13157115792 |
|||
IXYS/艾赛斯 |
SOT227 |
265209 |
假一罚十原包原标签常备现货! |
||||
IXYS |
2022 |
SOT-227B |
58 |
原厂原装正品,价格超越代理 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
SOT-227 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
IXFN80N50P芯片相关品牌
IXFN80N50P规格书下载地址
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IXFN80N50P数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXFK27N80Q
IXFK27N80Q，TO-264，全新原装当天发货或门市自取0755-82732291.
2019-3-15IXFK40N90P
IXFK40N90P，全新原装当天发货或门市自取0755-82732291.
2019-3-14
DdatasheetPDF页码索引
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