位置：首页 > IC中文资料第85页 > IXFN36N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFN36N60 | HiPerFETPowerMOSFET HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpol | IXYS IXYS Integrated Circuits Division |  |   |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=34.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=95mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelSupreMOS짰MOSFET600V,36A,90m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
N-ChannelSupreMOS짰MOSFET600V,36A,90m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelMOSFET,FRFET 文件：269.28 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
IXFN36N60产品属性
- 类型
描述
- 型号
IXFN36N60
- 功能描述
MOSFET 600V 36A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
2 |
公司优势库存 热卖中!! |
|||||
IXYS |
23+ |
MODULE |
67928 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IXYS |
2306+ |
MODULE |
518 |
优势代理渠道,原装现货,可全系列订货 |
|||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IXYS |
23+ |
模块 |
3562 |
||||
IXYS |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
IXYS |
2021+ |
模块 |
6430 |
原装现货/欢迎来电咨询 |
|||
IXYS |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
IXYS |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
IXYS |
19+/20+ |
SOT-227B |
1000 |
主打产品价格优惠.全新原装正品 |
IXFN36N60芯片相关品牌
IXFN36N60规格书下载地址
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IXFN36N60数据表相关新闻
IXFN300N10P
进口代理
2022-12-7IXFT60N60X3HV
IXFT60N60X3HV
2022-8-11IXFP22N65X2M
原装正品现货
2022-7-19IXGH60N60C3D1
IXGH60N60C3D1，全新原装当天发货或门市自取0755-82732291.
2019-12-2IXFK27N80Q
IXFK27N80Q，TO-264，全新原装当天发货或门市自取0755-82732291.
2019-3-15IXFK40N90P
IXFK40N90P，全新原装当天发货或门市自取0755-82732291.
2019-3-14
DdatasheetPDF页码索引
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