封装/外壳：SOT-227-4，miniBLOC 包装：盒 描述：MOSFET N-CH 250V 120A SOT-227B 分立半导体产品 晶体管 - FET，MOSFET - 单个

HiPerFETPowerMOSFETs

SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applications •DC-DCcon

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=24mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

PolarPowerMOSFETHiPerFET

N-ChannelEnhancementModeAvalancheRatedFastIntrisicDiode Features •InternationalStandardPackages •FastIntrinsicDiode •AvalancheRated •LowPackageInductance Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •Switched-ModeandResonant-ModePowe

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

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