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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXFM12N100 | HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division |  |   |
IXFM12N100 | HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | | |
IXFM12N100 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | | | |
N-ChannelEnhancementModeMOSFET 文件：231.04 Kbytes Page：4 Pages | DACO DACO |  | | |
N-ChannelEnhancementModeMOSFET 文件：238.98 Kbytes Page：4 Pages | DACO DACO | | |
IXFM12N100产品属性
- 类型
描述
- 型号
IXFM12N100
- 功能描述
MOSFET 12 Amps 1000V 1.05 Rds
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
IXYS/艾赛斯 |
23+ |
TO-03 |
66800 |
原装正品专营军工 |
|||
IXYS |
02+ |
TO-3 |
536 |
||||
IXYS |
2023+ |
TO-247 |
50000 |
原装现货 |
|||
IXYS |
18 |
TO-03 |
200 |
进口原装正品优势供应QQ3171516190 |
|||
XILINX直供 |
BGA |
3647 |
莱克讯每片来自原厂!价格超越代理!只做进口原装! |
||||
IXYS |
1908+ |
TO-03 |
4862 |
只做进口原装!假一赔百!自己库存价优! |
|||
IXYS/艾赛斯 |
专业铁帽 |
1 |
原装铁帽专营,代理渠道量大可订货 |
||||
23+ |
N/A |
85800 |
正品授权货源可靠 |
IXFM12N100芯片相关品牌
IXFM12N100规格书下载地址
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IXFM12N100数据表相关新闻
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进口代理
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原装正品现货
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2019-3-14
DdatasheetPDF页码索引
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