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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBR42N170 | HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features ●SiliconchiponDirect-CopperBond(DCB)substrate ●Isolatedmountingsurface ●2500Velectricalisolation Advantages ●Lowgatedriverequirement ●Highpowerdensity Applications: ●Switched-modeandresonant-modepowersupplies ●Uninterruptiblepowersupplies(UPS) ●Lase | IXYS IXYS Integrated Circuits Division |  |   |
IXBR42N170 | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1700V 57A 200W ISOPLUS247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor VCES=1700V IC25=75A VCE(sat)=3.3V Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applicatio | IXYS IXYS Integrated Circuits Division | | | |
BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •SquareRBSOA •2500V~IsolationVoltage •HighBlockingVoltage •InternationalStandardPackage •Anti-ParallelDiode •LowConductionLosses Advantages •LowGateDriveRequirement •HighPowerDe | IXYS IXYS Integrated Circuits Division | | | |
BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division | | |
IXBR42N170产品属性
- 类型
描述
- 型号
IXBR42N170
- 功能描述
MOSFET 57Amps 1700V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
22+ |
ISOPLUS24 |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
IXYS/艾赛斯 |
23+ |
TO-268 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IXYS |
23+ |
TO-268 |
8600 |
全新原装现货 |
|||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-247-3 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IXYS |
22+ |
ISOPLUS247? |
9000 |
原厂渠道,现货配单 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS(艾赛斯) |
2335 |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
IXYS |
08+(pbfree) |
TO-268 |
8866 |
||||
IXYS |
23+ |
ISOPLUS24 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
6000 |
原装正品，支持实单 |
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IXBR42N170规格书下载地址
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DdatasheetPDF页码索引
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