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IXBH42N170A价格
参考价格：￥92.1205
型号：IXBH42N170A 品牌：Ixys 备注：这里有IXBH42N170A多少钱，2024年最近7天走势，今日出价，今日竞价，IXBH42N170A批发/采购报价，IXBH42N170A行情走势销售排行榜，IXBH42N170A报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IXBH42N170A | BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division |  |   |
IXBH42N170A | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 1700V 42A 357W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | IXYS IXYS Integrated Circuits Division | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor VCES=1700V IC25=75A VCE(sat)=3.3V Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Lowconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applicatio | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •SquareRBSOA •2500V~IsolationVoltage •HighBlockingVoltage •InternationalStandardPackage •Anti-ParallelDiode •LowConductionLosses Advantages •LowGateDriveRequirement •HighPowerDe | IXYS IXYS Integrated Circuits Division | | | |
HighVoltage,HighGainBIMOSFETTMMonolithicBipolarMOSTransistor Features ●SiliconchiponDirect-CopperBond(DCB)substrate ●Isolatedmountingsurface ●2500Velectricalisolation Advantages ●Lowgatedriverequirement ●Highpowerdensity Applications: ●Switched-modeandresonant-modepowersupplies ●Uninterruptiblepowersupplies(UPS) ●Lase | IXYS IXYS Integrated Circuits Division | | | |
BIMOSFETMonolithicBipolarMOSTransistor Features •HighBlockingVoltage •JEDECTO-268surfaceandJEDECTO-247AD •Fastswitching •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •MoldingepoxiesmeetUL94V-0flammabilityclassification Applications •ACmotorspeedcontrol | IXYS IXYS Integrated Circuits Division | | |
IXBH42N170A产品属性
- 类型
描述
- 型号
IXBH42N170A
- 功能描述
IGBT 晶体管 BIMOSET 42A 1700V
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
TO-247 |
18000 |
|||||
IXYS |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
89630 |
当天发货全新原装现货 |
|||
IXYS |
23+ |
TO-247 |
3000 |
全新原装 |
|||
IXYS |
1816+ |
TO-247 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IXYS |
2018+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
IXYS/LITTELFUSE |
23+ |
TO-247 |
810 |
只做原装提供一站式配套供货中利达 |
|||
IXYS/艾赛斯 |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
IXBH42N170A芯片相关品牌
IXBH42N170A规格书下载地址
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2020-4-10
DdatasheetPDF页码索引
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