IRF320价格

参考价格:¥7.5676

型号:IRF3205LPBF 品牌:International 备注:这里有IRF320多少钱,2024年最近7天走势,今日出价,今日竞价,IRF320批发/采购报价,IRF320行情走势销售排行榜,IRF320报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF320

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF320

N-CHANNELPOWERMOSFETS

SamsungSamsung Group

三星三星半导体

Samsung
IRF320

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF320

StaticDrain-SourceOn-Resistance

文件:48.23 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF320

N-ChannelPowerMOSFETs

文件:333.66 Kbytes Page:6 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF320

2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs

文件:137.47 Kbytes Page:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

N-ChannelPowerMOSFETs,3.0A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:234.38 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

N-ChannelPowerMOSFET

文件:622 Kbytes Page:7 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI

iscN-ChannelMosfetTransistor

文件:139.86 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

N-ChannelTrenchProcessPowerMOSFETTransistor

文件:970.8 Kbytes Page:5 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI

HEXFETPowerMOSFET

文件:598.69 Kbytes Page:7 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

N-ChannelMOSFETTransistor

文件:338.88 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelPowerMOSFET(55V/110A)

文件:543.27 Kbytes Page:2 Pages

FS

First Silicon Co., Ltd

FS

AdvancedProcessTechnology

文件:618.88 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:1.17944 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

文件:609.74 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:221.54 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:221.54 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:609.74 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:1.09156 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

文件:618.88 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:266.94 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFETPowerMOSFET

文件:609.74 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:286.48 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:286.48 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:286.48 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:266.96 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:618.88 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelMOSFETTransistor

文件:338.76 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IscN-ChannelMOSFETTransistor

文件:300.06 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ClockOscillators

文件:143.97 Kbytes Page:3 Pages

OSCILENT

Oscilent Corporation

OSCILENT

RectifierDiode

文件:370.14 Kbytes Page:3 Pages

SemikronSemikron

赛米控

Semikron

SCREWTYPESERIES

文件:323.12 Kbytes Page:1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子(上海)有限公司

DBLECTRO

CeleronDProcessor

文件:1.75778 Mbytes Page:82 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IRF320产品属性

  • 类型

    描述

  • 型号

    IRF320

  • 制造商

    International Rectifier

  • 功能描述

    HEXFET, HI-REL - Bulk

更新时间:2024-4-27 10:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON
21+
TO-220
100000
原装现货,假一赔十,实单洽谈
IR
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
IR
TO-220
3200
专业分销全系列产品!绝对原装正品!量大可订!价格优
IR
23+
TO-220
20000
进口原装现货
IR
22+
TO-220
16418
原装正品现货,可开13点税
IR
05+
原厂原装
5566
只做全新原装真实现货供应
INFINEON/英飞凌
2115+
TO-220
20000
16年电子元件现货供应商 终端BOM表可配单提供样品
23+
N/A
12550
正品授权货源可靠
INFINEON
20+
TO-263
26000
实单请给接受价
IR
23+
TO-220
7500
保证进口原装现货假一赔十

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