位置:首页 > IC中文资料第764页 > IRF320
IRF320价格
参考价格:¥7.5676
型号:IRF3205LPBF 品牌:International 备注:这里有IRF320多少钱,2024年最近7天走势,今日出价,今日竞价,IRF320批发/采购报价,IRF320行情走势销售排行榜,IRF320报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF320 | 2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF320 | N-CHANNELPOWERMOSFETS
| SamsungSamsung Group 三星三星半导体 | ||
IRF320 | N-ChannelPowerMOSFETs,3.0A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF320 | StaticDrain-SourceOn-Resistance 文件:48.23 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF320 | N-ChannelPowerMOSFETs 文件:333.66 Kbytes Page:6 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
IRF320 | 2.8Aand3.3A,350Vand400V,1.8and2.5Ohm,N-ChannelPowerMOSFETs 文件:137.47 Kbytes Page:3 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
N-ChannelPowerMOSFETs,3.0A,350-400V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. •LowRDs(on) •VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET 文件:234.38 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
N-ChannelPowerMOSFET 文件:622 Kbytes Page:7 Pages | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
iscN-ChannelMosfetTransistor 文件:139.86 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
N-ChannelTrenchProcessPowerMOSFETTransistor 文件:970.8 Kbytes Page:5 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
HEXFETPowerMOSFET 文件:598.69 Kbytes Page:7 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | |||
N-ChannelMOSFETTransistor 文件:338.88 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelPowerMOSFET(55V/110A) 文件:543.27 Kbytes Page:2 Pages | FS First Silicon Co., Ltd | |||
AdvancedProcessTechnology 文件:618.88 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:1.17944 Mbytes Page:10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPowerMOSFET 文件:609.74 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:221.54 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:221.54 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET 文件:609.74 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:1.09156 Mbytes Page:10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
AdvancedProcessTechnology 文件:618.88 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:266.94 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPowerMOSFET 文件:609.74 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:286.48 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:286.48 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:286.48 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:266.96 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:618.88 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor 文件:338.76 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
AdvancedProcessTechnology 文件:385.59 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:385.59 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:385.59 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:385.59 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnologyUltraLowOn-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
IscN-ChannelMOSFETTransistor 文件:300.06 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:385.59 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:385.59 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ClockOscillators 文件:143.97 Kbytes Page:3 Pages | OSCILENT Oscilent Corporation | |||
RectifierDiode 文件:370.14 Kbytes Page:3 Pages | SemikronSemikron 赛米控 | |||
SCREWTYPESERIES 文件:323.12 Kbytes Page:1 Pages | DBLECTRODB Lectro Inc 迪贝电子迪贝电子(上海)有限公司 | |||
CeleronDProcessor 文件:1.75778 Mbytes Page:82 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) |
IRF320产品属性
- 类型
描述
- 型号
IRF320
- 制造商
International Rectifier
- 功能描述
HEXFET, HI-REL - Bulk
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
21+ |
TO-220 |
100000 |
原装现货,假一赔十,实单洽谈 |
|||
IR |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
IR |
TO-220 |
3200 |
专业分销全系列产品!绝对原装正品!量大可订!价格优 |
||||
IR |
23+ |
TO-220 |
20000 |
进口原装现货 |
|||
IR |
22+ |
TO-220 |
16418 |
原装正品现货,可开13点税 |
|||
IR |
05+ |
原厂原装 |
5566 |
只做全新原装真实现货供应 |
|||
INFINEON/英飞凌 |
2115+ |
TO-220 |
20000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
23+ |
N/A |
12550 |
正品授权货源可靠 |
||||
INFINEON |
20+ |
TO-263 |
26000 |
实单请给接受价 |
|||
IR |
23+ |
TO-220 |
7500 |
保证进口原装现货假一赔十 |
IRF320规格书下载地址
IRF320参数引脚图相关
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- irf630
- irf540n
- irf540
- IRF352
- IRF351
- IRF350
- IRF343
- IRF342
- IRF3415STRLPBF-CUTTAPE
- IRF3415STRLPBF
- IRF3415STRL
- IRF3415SPBF
- IRF3415PBF
- IRF3415
- IRF3410
- IRF341
- IRF340
- IRF333
- IRF332
- IRF331-I
- IRF3315STRLPBF
- IRF3315SPBF
- IRF3315PBF
- IRF3315
- IRF331
- IRF3305PBF
- IRF3305
- IRF330
- IRF3256
- IRF323
- IRF322
- IRF321
- IRF3205ZSTRLPBF
- IRF3205ZPBF
- IRF3205ZLPBF
- IRF3205STRRPBF
- IRF3205STRLPBF-CUTTAPE
- IRF3205STRLPBF/BKN
- IRF3205STRLPBF
- IRF3205SPBF
- IRF3205PBF
- IRF3205LPBF
- IRF3205
- IRF-3-1K-10%-B08
- IRF3103
- IRF305
- IRF3007STRLPBF
- IRF3007SPBF
- IRF3007
- IRF3000
- IRF300
- IRF-3
- IRF2N60
- IRF2907ZSTRLPBF
- IRF2907ZSPBF
- IRF2907ZS-7PPBF
- IRF2907ZPBF
- IRF2907ZLPBF
- IRF2903ZSTRLP
- IRF2903ZSPBF
- IRF2903ZPBF
- IRF2903ZLPBF
- IRF2807ZSTRLPBF
- IRF2807ZSPBF
- IRF2807ZPBF
- IRF2807ZLPBF
- IRF2807STRRPBF
- IRF2807STRLPBF
- IRF2807SPBF
- IRF2807PBF
- IRF2807
- IRF2805
- IRF2804
- IRF260
- IRF257
- IRF256
- IRF255
- IRF254
- IRF253
- IRF252
- IRF251
- IRF250
- IRF247
IRF320数据表相关新闻
IRF3205PBF
IRF3205PBF
2022-4-21IRF3205
IRF3205
2019-12-27IRF2907ZS-7PPBF公司大量原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-28IRF3205PBF公司大量原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-28IRF2903ZSPBF公司大量原装现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-28IRF2907ZPBFMOSFETMOSFT
IRF2907ZPBFMOSFETMOSFT
2019-4-11
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80