IRF3205价格

参考价格:¥7.5676

型号:IRF3205LPBF 品牌:International 备注:这里有IRF3205多少钱,2024年最近7天走势,今日出价,今日竞价,IRF3205批发/采购报价,IRF3205行情走势销售排行榜,IRF3205报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF3205

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF3205

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF3205

N-ChannelPowerMOSFET

文件:622 Kbytes Page:7 Pages

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

NELLSEMI
IRF3205

iscN-ChannelMosfetTransistor

文件:139.86 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF3205

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF3205

N-ChannelTrenchProcessPowerMOSFETTransistor

文件:970.8 Kbytes Page:5 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

THINKISEMI
IRF3205

HEXFETPowerMOSFET

文件:598.69 Kbytes Page:7 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP
IRF3205

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A??

VDSS=55V RDS(on)=8.0mΩ ID=110A… Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelMOSFETTransistor

文件:338.88 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-ChannelPowerMOSFET(55V/110A)

文件:543.27 Kbytes Page:2 Pages

FS

First Silicon Co., Ltd

FS

HEXFETPowerMOSFET

文件:609.74 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:618.88 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:1.17944 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

文件:221.54 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:221.54 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:1.09156 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

文件:618.88 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:266.94 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFETPowerMOSFET

文件:609.74 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:609.74 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:286.48 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:286.48 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:286.48 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:266.96 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:618.88 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelMOSFETTransistor

文件:338.76 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IscN-ChannelMOSFETTransistor

文件:300.06 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnologyUltraLowOn-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:385.59 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FHP3205isalow-voltagehigh-currentpowerMOSfieldeffecttransistor,widelyusedinpowerinverters

Features 110A,55V,RDS(on)=8.0mΩfastswitching speed

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

Heyco®OriginalSeries-35LiquidTightCordgrips

文件:264.32 Kbytes Page:1 Pages

Heyco

Heyco

Heyco

WASHERS

文件:68.27 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

HF-bandFan-Out

文件:384.69 Kbytes Page:1 Pages

DOW-KEYDow-Key Microwave Corporation

道键式微波炉

DOW-KEY

FLMC2000E(SM40)LC

文件:384.74 Kbytes Page:8 Pages

PhoenixPhoenix Contact

菲尼克斯电气德国菲尼克斯电气集团

Phoenix

IRF3205产品属性

  • 类型

    描述

  • 型号

    IRF3205

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 55V 110A 3PIN TO-220AB - Rail/Tube

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

更新时间:2024-4-26 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
NA
6500
全新原装假一赔十
Infineon Technologies
23+
TO-262
30000
晶体管-分立半导体产品-原装正品
INFINEON/IR
1907+
NA
4050
20年老字号,原装优势长期供货
INFINEON/英飞凌
23+
TO-263
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
IR
17+
FAX:6564815466
9800
只做全新进口原装,现货库存
IR
23+
TO220
9960
价格优势/原装现货/客户至上/欢迎广大客户来电查询
INFINEON
23+
TO-220
20000
原装正品!假一罚十!
IR
23+
TO-220
7500
保证进口原装现货假一赔十
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
IR
1816+
6
6523
科恒伟业!只做原装正品,假一赔十!

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