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位置：首页 > IC中文资料第1613页 > HGT1S3N60

型号 功能描述 生产厂家&企业 LOGO 操作
HGT1S3N60A4DS

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGT1S3N60A4DS

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGT1S3N60A4DS9A

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGT1S3N60A4DSandtheHGTP3N60A4DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltaged

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGT1S3N60A4S

600V,SMPSSeriesN-ChannelIGBT

TheHGTD3N60A4S,HGT1S3N60A4SandtheHGTP3N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGT1S3N60B3DS

7A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTP3N60B3DandHGT1S3N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweronstatevoltagedropv

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGT1S3N60B3S

7A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD3N60B3S,HGT1S3N60B3SandHGTP3N60B3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGT1S3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch

HARRIS

HARRIS corporation

HARRIS
HGT1S3N60C3DS

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGT1S3N60C3DS

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Description TheHGTP3N60C3D,HGT1S3N60C3D,andHGT1S3N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuch

HARRIS

HARRIS corporation

HARRIS
HGT1S3N60C3D

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

文件：394.42 Kbytes Page：11 Pages

HARRIS

HARRIS corporation

HARRIS
HGT1S3N60C3DS

6A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

文件：394.42 Kbytes Page：11 Pages

HARRIS

HARRIS corporation

HARRIS

HGT1S3N60产品属性

  • 类型

    描述

  • 型号

    HGT1S3N60

  • 功能描述

    IGBT 晶体管 TO-263

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

HGT1S3N60供应商更多...

更新时间：2024-5-26 17:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳兆威电子有限公司
HGT1S3N60A4DS9A
FAIRCHILD/仙童
23+
TO-263(D2PAK)
90000
只做原厂渠道价格优势可提供技术支持
询价
深圳市汇莱威科技有限公司
HGT1S3N60A4DS9A
FAIRCHILD
TO-263
68900
原包原标签100%进口原装常备现货!
询价
深圳市一线半导体有限公司
HGT1S3N60A4DS9A
FAIRCHILD
08+(pbfree)
TO-263(D2PAK)
8866
询价
深圳市惊羽科技有限公司
HGT1S3N60A4DS9A
ON-安森美
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市宏捷佳电子科技有限公司
HGT1S3N60A4DS9A
FAIRCHILD
23+
TO-263
12300
全新原装真实库存含13点增值税票!
询价
深圳市纳艾斯科技有限公司
HGT1S3N60A4DS9A
FAIRCHI
2020+
SOT-263
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
天津市博通航睿技术有限公司
HGT1S3N60A4DS9A
FAIRCHILD
18+
SOT-263
5100
全新原装 实单必成
询价
深圳市创新迹电子有限公司
HGT1S3N60A4DS9A
FAIRCHILD/仙童
23+
TO-263
8400
专注配单,只做原装进口现货
询价
深圳市国宇半导体科技有限公司
HGT1S3N60A4DS9A
FAIRCHILD/仙童
23+
TO-263
10000
公司只做原装正品
询价
瀚佳科技(深圳)有限公司
HGT1S3N60A4S
FAIRCHILD
21+
35200
一级代理/放心采购
询价

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HGT1S3N60规格书下载地址

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HGT1S3N60数据表相关新闻

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