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HGT1S10N120BN价格
参考价格：￥0.0000
型号：HGT1S10N120BNS 品牌：FAIRCHILD 备注：这里有HGT1S10N120BN多少钱，2024年最近7天走势，今日出价，今日竞价，HGT1S10N120BN批发/采购报价，HGT1S10N120BN行情走势销售排行榜，HGT1S10N120BN报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.7V（Max）@IC=10A ·ShortCircuitRating ·LowConductionLoss APPLICATIONS ·ACandDCmotorcontrols ·Powersuppliesanddrivers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
35A,1200V,NPTSeriesN-ChannelIGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGT1S10N120BN产品属性
- 类型
描述
- 型号
HGT1S10N120BN
- 功能描述
IGBT 晶体管 35A 1200V NPT N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FAIRCHILD/仙童 |
23+ |
TO263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
ON/安森美 |
23+ |
TO263 |
24916 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD |
22+23+ |
TO263 |
36872 |
绝对原装正品全新进口深圳现货 |
|||
ON |
23+ |
TO263 |
6000 |
全新原装现货、诚信经营! |
|||
FAIRCHILD/仙童 |
2024+原装现货 |
TO263 |
8950 |
BOM配单专家,发货快,价格低 |
|||
FAIRCHIL |
08+(pbfree) |
TO-263 |
8866 |
||||
ON(安森美) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
FAIRCHILD/仙童 |
TO263 |
265209 |
假一罚十原包原标签常备现货! |
||||
ON/安森美 |
22+ |
SMD |
9000 |
原装正品 |
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HGT1S10N120BN数据表相关新闻
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2020-11-25HGDESM021A
https://hch01.114ic.com/
2020-11-13HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
2020-1-13
DdatasheetPDF页码索引
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