位置:首页 > IC中文资料第5978页 > BCR
BCR晶体管资料
BCR别名:BCR三极管、BCR晶体管、BCR晶体三极管
BCR生产厂家:
BCR制作材料:Si-PNP
BCR性质:表面帖装型 (SMD)_低频或音频放大 (LF)
BCR封装形式:贴片封装
BCR极限工作电压:40V
BCR最大电流允许值:2A
BCR最大工作频率:100MHZ
BCR引脚数:3
BCR最大耗散功率:
BCR放大倍数:
BCR图片代号:H-100
BCRvtest:40
BCRhtest:100000000
- BCRatest:2
BCRwtest:0
BCR代换 BCR用什么型号代替:2SB1188,
BCR价格
参考价格:¥0.2396
型号:BCR08PNH6327 品牌:INF 备注:这里有BCR多少钱,2024年最近7天走势,今日出价,今日竞价,BCR批发/采购报价,BCR行情走势销售排行榜,BCR报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BCR | Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | ||
BCR | Thin Film, Back-Contact Resistor 文件:102.64 Kbytes Page:3 Pages | VishayVishay Siliconix 威世科技 | ||
Thin Film, Back-Contact Resistor FEATURES •Wirebondable •Onlyonewirebondrequired •Smallsize:0.020inchessquare •Resistancerange:10to1M •Oxidizedsiliconsubstrateforgoodpower dissipation •Moistureresistant •Casesize:0202 •Resistormaterial:tantalumnitride,self-passivating •Materialcate | VishayVishay Siliconix 威世科技 | |||
LOW POWER USE PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................600V •IRGTI,IRGTIII............................................................5mA APPLICATION Electricfan,aircleaner | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use TriacLowPowerUse Features •IT(RMS):0.8A •VDRM:600V •IRGTI,IRGTIII:5mA •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LOW POWER USE PLANAR PASSIVATION TYPE ●IT(RMS)...............................................................0.8A ●VDRM.................................................................700V ●IFGTI,IRGTII,IRGTIII.......................................5mA APPLICATION ContactlessACswitches,heating,refrigerator,w | MitsubishiMITSUBISHI electlic 三菱电机 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................600V •IFGTI,IRGTI,IRGTIII..............................................5mA •IFGTIII............................... | POWEREX POWEREX | |||
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 •IT(RMS).....................................................................0.8A •VDRM.......................................................................600V •IFGTⅠ,IRGTⅡ,IRGTⅢ..............................................5mA •IFGT#.................................... | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGT:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGTIII:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolap | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGTIII:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolap | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGT:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Low Power Use Features •IT(RMS):0.8A •VDRM:600V •IFGTI,IRGTI,IRGT:5mA •IFGT:10mA •Non-InsulatedType •PlanarPassivationType •CompletedPbFree Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecontrolapplic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
700V - 0.8A - Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •CompletedPbFree •Non-InsulatedType •PlanarPassivationType •SurfaceMountedType Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecon | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
700V - 0.8A - Triac Low Power Use Features •IT(RMS):0.8A •VDRM:700V •IFGTI,IRGTI,IRGTIII:5mA •CompletedPbFree •Non-InsulatedType •PlanarPassivationType •SurfaceMountedType Applications HybridIC,solidstaterelay,electricfan,washingmachine,andothergeneralpurposecon | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................400V •IFGTI,IRGTII,IRGTIII.............................................5mA •IFGTIII............................... | MitsubishiMITSUBISHI electlic 三菱电机 | |||
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS).....................................................................0.8A •VDRM.......................................................................400V •IFGTI,IRGTII,IRGTIII.............................................5mA •IFGTIII.............................. | POWEREX POWEREX | |||
NPN/PNP Silicon Digital Transistor Array NPN/PNPSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Two(galvanic)internalisolatedNPN/PNP Transistorsinonepackage •BuiltinbiasresistorNPNandPNP (R1=2.2kΩ,R2=47kΩ) •Pb-free(RoHScompliant)package •Qualified | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) NPN/PNPSiliconDigitalTansistorArray •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Two(galvanic)internalisolatedNPN/PNPTransistorinonepackage •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | |||
SMD Digital NPN/PNP Transistors Features Twocomplementarytransistorsinonepackage Costandspacesavingsbyintegrated biasresistorcombinations ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing, Switching,Amplification Commercialgrade Suffix-Q:AEC | DiotecDIOTEC 德欧泰克 | |||
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) NPN/PNPSiliconDigitalTansistorArray •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Two(galvanic)internalisolatedNPN/PNPTransistorinonepackage •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | |||
NPN/PNP Silicon Digital Transistor Array NPN/PNPSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Two(galvanic)internalisolatedNPN/PNP Transistorsinonepackage •BuiltinbiasresistorNPNandPNP (R1=10kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •Qualified | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Two(galvanic)internalisolatedTransistorsinonpackage •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGTI,IRGTI,IRGTIII.........................30mA(20mA)✽5 APPLICATION ContactlessACswitches,lightdrimmer,electric | MitsubishiMITSUBISHI electlic 三菱电机 | |||
Triac 10 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch | POWEREX POWEREX |
BCR产品属性
- 类型
描述
- 型号
BCR
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Thin Film, Back-Contact Resistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
SOP-8 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON/英飞凌 |
23+ |
SOT323 |
45000 |
热卖优势现货 |
|||
MITSUBISHI/三菱 |
23+ |
NA/ |
3470 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
17+ |
DIP |
95 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
23+ |
DIP |
28000 |
原装正品 |
|||
RENESAS/Renesas Electronics Am |
21+ |
DIP |
95 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
英飞凌 |
21+ |
SMD |
2894 |
只做原装,低价出货 |
|||
HOLTEK |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
INFINEON |
2024+ |
SC74 |
32560 |
原装优势绝对有货 |
|||
RENASAS |
23+ |
TO-92 |
1300 |
原装正品现货!支持实单! |
BCR规格书下载地址
BCR参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BCR116W
- BCR116
- BCR112
- BCR10PM
- BCR10EM-4...-12
- BCR10DM-4...-12
- BCR10CS
- BCR10CM-4...-12
- BCR10CM
- BCR10C-2...-8
- BCR10B-2...-8
- BCR10AM-8
- BCR10AM-6
- BCR10AM-4
- BCR10AM-12
- BCR10AM-10
- BCR10A-8
- BCR10A-6
- BCR10A-4
- BCR10A-2
- BCR108W
- BCR108T
- BCR108S
- BCR108F
- BCR108
- BCR103U
- BCR103T
- BCR103F
- BCR103
- BCR101T
- BCR101F
- BCR101
- BCR10
- BCR08PN
- BCR08AS
- BCR08AM
- BCR_15
- BCQ
- BCPA94
- BCPA44
- BCPA42
- BCPA14
- BCP882J
- BCP882H
- BCP882
- BCP869
- BCP8050
- BCP772
- BCP75W
- BCP72M
- BCP72
- BCP71M
- BCP71
- BCP70M
- BCP70
- BCP69T1
- BCP69L3
- BCP69-C
- BCP69
- BCP68
- BCP628
- BCP627
- BCP56/16
- BCP56/10
- BCP56
- BCP55/16
- BCP55/10
- BCP55
- BCP54/16
- BCP54/10
- BCP54
- BCP53/16
- BCP53/10
- BCP53
BCR数据表相关新闻
BCR108SH6327XTSA1
BCR108SH6327XTSA1三极管INFINEON/英飞凌封装SOT363
2022-8-1BCX56-16 CJ/长电 SOT-89 支持原装长电订货型号,欢迎咨询!
BCX56-16CJ/长电SOT-89
2021-5-18BCP68
BCP68
2020-11-3BCV46E6327绝对有货陆续到货中
BCV46E6327 绝对有货陆续到货中
2020-10-31BCP56-16 NXP
BCP56-16NXP
2020-10-13BCP56-16
BCP56-16
2020-4-10
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80