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BCR108晶体管资料
BCR108别名：BCR108三极管、BCR108晶体管、BCR108晶体三极管
BCR108生产厂家：
BCR108制作材料：Si-N+R
BCR108性质：表面帖装型 （SMD）
BCR108封装形式：贴片封装
BCR108极限工作电压：50V
BCR108最大电流允许值：0.1A
BCR108最大工作频率：<1MHZ或未知
BCR108引脚数：3
BCR108最大耗散功率：
BCR108放大倍数：
BCR108图片代号：H-15
BCR108vtest：50
BCR108htest：999900
- BCR108atest：.1
BCR108wtest：0
BCR108代换 BCR108用什么型号代替：DTC123JK,KSR1113,RN1405,UN221M,
BCR108价格
参考价格：￥0.1150
型号：BCR108E6327 品牌：INF 备注：这里有BCR108多少钱，2024年最近7天走势，今日出价，今日竞价，BCR108批发/采购报价，BCR108行情走势销售排行榜，BCR108报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR108 | NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd |  |   |
BCR108 | NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
BCR108 | NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCR108 | NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCR108 | NPNSiliconDigitalTransistor 文件：873.25 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCR108 | NPNSiliconDigitalTransistor 文件：211.61 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistorArray(Switchingcircuit,inverter,interfacecircuit,drivercircuit) NPNSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Two(galvanic)internalisolatedTransistorsinonpackage •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor 文件：211.61 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor 文件：873.25 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor 文件：211.61 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor 文件：873.25 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor 文件：211.61 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor 文件：211.61 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconDigitalTransistor 文件：873.25 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CustomerSpecification Construction Diameters(In) 1)Component14X1COND a)Conductor18(41/34)AWGBareCopper0.043 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.063 (1)Color(s) CondColorCondColorCondColor 1BROWN3BLUE 2WHITE4BLACK 2)CableAssembly4ComponentsCabled a)Twists:5.3Twist | ALPHAWIREAlpha Wire 阿尔法电线 |  | | |
CustomerSpecification Construction Diameters(In) 1)Component14X1COND a)Conductor18(41/34)AWGBareCopper0.043 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.063 (1)Color(s) CondColorCondColorCondColor 1BROWN3BLUE 2WHITE4BLACK 2)CableAssembly4ComponentsCabled a)Twists:5.3Twist | ALPHAWIREAlpha Wire 阿尔法电线 | | | |
PrecisionWirewoundResistors 100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst | Riedon Riedon Inc. |  | | |
NetworkChipResistors 文件：94 Kbytes Page：3 Pages | HOKURIKUHokuriku Electric Industry Co., Ltd 北陆电气工业柱式会社 |  | | |
PrecisionWirewoundResistors 文件：318.25 Kbytes Page：2 Pages | Riedon Riedon Inc. | | |
BCR108产品属性
- 类型
描述
- 型号
BCR108
- 制造商
Infineon Technologies
- 功能描述
NPN 50V 100mA
- 制造商
Infineon Technologies
- 功能描述
NPN 50V 100mA Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
SOT363 |
25900 |
新到现货,只有原装 |
|||
Infineon/Infineon Technologies |
21+ |
SOT-23 |
32 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
23+ |
N/A |
49400 |
正品授权货源可靠 |
||||
INFINEON |
22+ |
SOT23 |
2345 |
原装正品!公司现货热卖! |
|||
INFINEON |
2022+ |
SOT-23 |
57550 |
||||
infineon/英飞凌 |
2021/2022+ |
NA |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon(英飞凌) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
SOT323 |
7906200 |
|||||
INFINEON |
1922+ |
SOT-23 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
INFINEON/英飞凌 |
23+ |
SOT-23 |
128000 |
BCR108芯片相关品牌
BCR108规格书下载地址
BCR108参数引脚图相关
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BCR108数据表相关新闻
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DdatasheetPDF页码索引
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