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BCR10晶体管资料
BCR108别名:BCR108三极管、BCR108晶体管、BCR108晶体三极管
BCR108生产厂家:
BCR108制作材料:Si-N+R
BCR108性质:表面帖装型 (SMD)
BCR108封装形式:贴片封装
BCR108极限工作电压:50V
BCR108最大电流允许值:0.1A
BCR108最大工作频率:<1MHZ或未知
BCR108引脚数:3
BCR108最大耗散功率:
BCR108放大倍数:
BCR108图片代号:H-15
BCR108vtest:50
BCR108htest:999900
- BCR108atest:.1
BCR108wtest:0
BCR108代换 BCR108用什么型号代替:DTC123JK,KSR1113,RN1405,UN221M,
BCR10价格
参考价格:¥0.1150
型号:BCR108E6327 品牌:INF 备注:这里有BCR10多少钱,2024年最近7天走势,今日出价,今日竞价,BCR10批发/采购报价,BCR10行情走势销售排行榜,BCR10报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BCR10 | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) NPN/PNPSiliconDigitalTansistorArray •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Two(galvanic)internalisolatedNPN/PNPTransistorinonepackage •Builtinbiasresistor(R1=10kΩ,R2=10kΩ) | SIEMENS Siemens Ltd | ||
BCR10 | NPN/PNP Silicon Digital Transistor Array NPN/PNPSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Two(galvanic)internalisolatedNPN/PNP Transistorsinonepackage •BuiltinbiasresistorNPNandPNP (R1=10kΩ,R2=10kΩ) •Pb-free(RoHScompliant)package •Qualified | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=100kΩ,R2=100kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistorArray •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Two(galvanic)internalisolatedTransistorsinonpackage •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) | SIEMENS Siemens Ltd | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •For6-PINpackages:two(galvanic)internal isolatedtransistorswithgoodmatching inonepackage | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Silicon Digital Transistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit, drivercircuit •Builtinbiasresistor(R1=2.2kΩ,R2=47kΩ) •BCR108S:Twointernallyisolated transistorswithgoodmatching inonemultichippackage •BCR108S:Fororientationinreelsee packa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGTI,IRGTI,IRGTIII.........................30mA(20mA)✽5 APPLICATION ContactlessACswitches,lightdrimmer,electric | MitsubishiMITSUBISHI electlic 三菱电机 | |||
Triac 10 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch | POWEREX POWEREX | |||
Triac 10 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch | POWEREX POWEREX | |||
Triac 10 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch | POWEREX POWEREX | |||
Triac Medium Power Use Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,refrigerator,w | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Medium Power Use Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,refrigerator,w | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
800V - 10A - Triac Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
800V - 10A - Triac Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
800V - 10A - Triac Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
800V - 10A - Triac Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
800V - 10A - Triac Features •IT(RMS):10A •VDRM:800V •IFGTI,IRGTI,IRGTIII:50mAor35mA(IGTitem:1) •Tj:150°C •PlanarPassivationType •HighCommutation | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac 10 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch | POWEREX POWEREX | |||
Triac 10 Amperes/400-600 Volts Description: AtriacisasolidstatesiliconACswitchwhichmaybegatetriggeredfromanoff-statetoanon-stateforeitherpolarityofappliedvoltage. Features: □GlassPassivation □ExcellentSurgeCapability □SelectedforInductiveLoads Applications: □ACSwitch | POWEREX POWEREX | |||
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGT!,IRGT!,IRGT#.........................30mA(20mA)✽5 APPLICATION Solidstaterelay,hybridIC | MitsubishiMITSUBISHI electlic 三菱电机 | |||
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE •IT(RMS)......................................................................10A •VDRM..............................................................400V/600V •IFGT!,IRGT!,IRGT#.........................30mA(20mA)✽5 APPLICATION Solidstaterelay,hybridIC | POWEREX POWEREX | |||
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,r | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit,controlofhouseholdequipmentsuchasTVsets,stereosystems,r | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Theproductguaranteedmaximumjunctiontemperatureof150°C •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit, | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C) Features •IT(RMS):10A •VDRM:600V •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note6 •Theproductguaranteedmaximumjunctiontemperatureof150°C •Non-InsulatedType •PlanarPassivationType Applications ContactlessACswitch,lightdimmer,electronicflasherunit, | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
600V - 10A - Triac Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
600V - 10A - Triac Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
600V - 10A - Triac Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
600V - 10A - Triac Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
600V - 10A - Triac Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
600V - 10A - Triac Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
600V - 10A - Triac Features •IT(RMS):10A •VDRM:600V •Tj:150°C •IFGTI,IRGTI,IRGTIII:30mA(20mA)Note5 •InsulatedType •PlanarPassivationType •Viso:2000V | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |
BCR10产品属性
- 类型
描述
- 型号
BCR10
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
NPN/PNP Silicon Digital Tansistor Array(Switching circuit, inverter, interface circuit, drive circuit)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+ |
SOT363 |
431 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
CYSTEKE |
21+ |
SOT-23 |
220 |
原装现货假一赔十 |
|||
Infineon(英飞凌) |
23+ |
SOT-363-6(SC-70-6) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Infineon(英飞凌) |
23+ |
NA |
7000 |
原装正品!假一罚十! |
|||
CYSTEKE |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
INFINEON |
23+ |
N/A |
50000 |
全新原装现货热卖 |
|||
INFINEON/英飞凌 |
SOT323 |
7906200 |
|||||
MITSUBISHI |
18+ |
MODULE |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
MITSUBISHI/三菱 |
23+ |
MODULE |
1430 |
原装正品,价格优势 |
|||
INFINEON |
22+ |
SOT23 |
2345 |
原装正品!公司现货热卖! |
BCR10规格书下载地址
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- BCP55/16
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- BCP55
- BCP54/16
- BCP54/10
- BCP54
- BCP53/16
- BCP53/10
BCR10数据表相关新闻
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2022-8-1BCX56-16 CJ/长电 SOT-89 支持原装长电订货型号,欢迎咨询!
BCX56-16CJ/长电SOT-89
2021-5-18BCP68
BCP68
2020-11-3BCV46E6327绝对有货陆续到货中
BCV46E6327 绝对有货陆续到货中
2020-10-31BCP56-16 NXP
BCP56-16NXP
2020-10-13BCP56-16
BCP56-16
2020-4-10
DdatasheetPDF页码索引
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