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BC817-25价格
参考价格:¥0.0482
型号:BC817-25,215 品牌:NXP 备注:这里有BC817-25多少钱,2024年最近7天走势,今日出价,今日竞价,BC817-25批发/采购报价,BC817-25行情走势销售排行榜,BC817-25报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BC817-25 | NPNgeneralpurposetransistor DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplement:BC807. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BC817-25 | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryPNPTypesAvailable(BC807) | TRSYS Transys Electronics | ||
BC817-25 | NPNSiliconAFTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP) | SIEMENS Siemens Ltd | ||
BC817-25 | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ForSwitching,AFDriverandAmplifierApplications ●ComplementaryPNPTypesAvailable(BC807) | DIODESDiodes Incorporated 达尔科技 | ||
BC817-25 | EPITAXAILPLANARNPNTRANSISTOR(forGeneralPurpose,Switching) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES ComplementarytoBC807. | KECKEC CORPORATION KEC株式会社 | ||
BC817-25 | SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | ||
BC817-25 | SurfacemountSi-EpitaxialPlanarTransistors Features GeneralPurposeThreecurrentgaingroupsComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,AmplificationCommercialgradeSuffix-Q:AEC-Q101compliant1)Suffix-AQ:inAEC-Q101qualification1) MechanicalData1) Tapedan | DiotecDIOTEC 德欧泰克 | ||
BC817-25 | GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | ||
BC817-25 | NPNSmallSignalTransistor310mW Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •IdeallySuitedforAutomaticInsertion • | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC817-25 | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ComplementaryNPNTypesAvailable(BC807) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | ||
BC817-25 | NPNGeneralPurposeAmplifier FEATURES ●ForgeneralAFapplication. ●ComplementaryPNPtypeavailableBC807. ●Highcollectorcurrent,highcurrentgain. ●Lowcollector-emittersaturationvoltage. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
BC817-25 | NPNGENERALPURPOSETRANSISTORS VOLTAGE45VoltsPOWER225mWatts FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99SnabovecanmeetRoHSenvironmentsubstancedirectiverequest | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
BC817-25 | NPNTransistor FEATURES •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC807(PNP) | SECOS SeCoS Halbleitertechnologie GmbH | ||
BC817-25 | 300mW,NPNSmallSignalTransistor FEATURES -Lowpowerloss,highcurrentcapability,lowVF -Surfacemountdevicetype -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeandRoHScomplian -PackingcodewithsuffixGmeans greencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
BC817-25 | TRANSISTOR(NPN) FEATURES ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807(PNP) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
BC817-25 | NPNSiliconAFTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC817-25 | NPNSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC817-25 | GeneralPurposeTransistors GeneralPurposeTransistors •Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | ||
BC817-25 | Plastic-EncapsulateTransistors FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage Complementarytypes:BC807(PNP) | OLITECH Olitech Electronics Co.Ltd | ||
BC817-25 | Plastic-EncapsulateTransistors BC817-16(NPN) BC817-25(NPN) BC817-40(NPN) FEATURES ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807(PNP) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
BC817-25 | Surfacemountswitchingdiode Features •ForgeneralAFapplication. •ComplementaryPNPtypeavailableBC807. •Highcollectorcurrent,highcurrentgain. •Lowcollector-emittersaturationvoltage. •RoHScompliantpackage Applications •Generalpurposemediumpoweramplifier. •Switchingrequiringcollectorcurrents | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | ||
BC817-25 | NPNGeneralPurposeAmplifier FEATURES ●ForgeneralAFapplication. ●ComplementaryPNPtypeavailableBC807. ●Highcollectorcurrent,highcurrentgain. ●Lowcollector-emittersaturationvoltage. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
BC817-25 | SMALLSIGNALNPNTRANSISTORS SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARNPNTRANSISTORS ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBC807-25ANDBC817-40RESPECTIVELY APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BC817-25 | SURFACEMOUNTSILICONNPNTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORBC817andBC818seriesdevicesaresiliconNPNtransistors,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | ||
BC817-25 | NPNgeneralpurposeamplifier Features ●Capableof0.3Watts(TA=25℃)ofPowerDissipation ●EpoxymeetsUL-94V-0flammabilityrating ●Halogenfreeavailableuponrequestbyaddingsuffix”HF” ●MoistureSensitivityLevel1 ●DeviceMarking:BC817-166A BC817-256B | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
BC817-25 | Plastic-EncapsulateTransistors BC817-16(NPN) BC817-25(NPN) BC817-40(NPN) FEATURES ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807(PNP) | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
BC817-25 | NPNEPTTAXIALSILICONTRANSISTOR NPNEPTTAXIALSILICONTRANSISTOR SURFACEMOUNTSMALL SIGANLTRANSISTORS | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
BC817-25 | NPNGeneralPurposeAmplifier FEATURES ●ForgeneralAFapplication. ●ComplementaryPNPtypeavailableBC807. ●Highcollectorcurrent,highcurrentgain. ●Lowcollector-emittersaturationvoltage. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
BC817-25 | Plastic-EncapsulateTransistors 文件:477.3 Kbytes Page:2 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 赛尔斯深圳市赛尔斯科技有限公司 | ||
BC817-25 | NPNTransistors 文件:1.31112 Mbytes Page:2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BC817-25 | NPNTransistors 文件:606.45 Kbytes Page:3 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
BC817-25 | NPNSmallSignalTransistor310mW 文件:466.39 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC817-25 | 300mW,NPNSmallSignalTransistor 文件:255.28 Kbytes Page:4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
BC817-25 | NPNSmallSignalTransistor310mW 文件:384.32 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC817-25 | NPNGENERALPURPOSETRANSISTORS 文件:89.67 Kbytes Page:3 Pages | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
BC817-25 | SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) 文件:355.05 Kbytes Page:4 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
BC817-25 | SMDGeneralPurposeNPNTransistors 文件:153.05 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
BC817-25 | 封装/外壳:SC-70,SOT-323 包装:散装 描述:TRANS NPN 45V 0.5A SOT323 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd | ||
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ForSwitching,AFDriverandAmplifierApplications ●ComplementaryPNPTypesAvailable(BC807) | DIODESDiodes Incorporated 达尔科技 | |||
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ComplementaryNPNTypesAvailable(BC807) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
NPNGENERALPURPOSEAMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
SiliconNPNGeneralPurposeTransistors Features SiliconNPNEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomplement:BC807-AUseries | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
SiliconNPNGeneralPurposeTransistors Features SiliconNPNEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomplement:BC807-AUseries | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
GeneralPurposeTransistors(NPNSilicon)? GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | |||
CASE318-08,STYLE6SOT-23(TO-236AB) GeneralPurposeTransistors NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 | |||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •SandNSVPrefixesforAutomotiveandOtherApplications RequiringUniqueSiteandControlChangeRequirements; AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compli | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(NPNSilicon)? GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(NPNSilicon)? GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(NPNSilicon)? GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •SandNSVPrefixesforAutomotiveandOtherApplications RequiringUniqueSiteandControlChangeRequirements; AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compli | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Generaldescription 500mANPNgeneral-purposetransistorsinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■General-purposetransistor ■Twocurrentgainselections ■Lowpackagehei | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |
BC817-25产品属性
- 类型
描述
- 型号
BC817-25
- 功能描述
两极晶体管 - BJT Transistor 300mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON Semiconductor |
2010+ |
N/A |
235370 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
|||
ZRE(治润) |
23+ |
SOT23 |
6000 |
||||
ZETEX |
21+ |
SOT23 |
5680 |
只做原装正品假一赔十!正规渠道订货! |
|||
NXP/恩智浦 |
24+ |
SOT-23 |
98000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ONSemi |
21+ |
SOT-23 |
6907 |
原装现货 |
|||
FAIRCHILD |
23+ |
NA |
707 |
专做原装正品,假一罚百! |
|||
NXP |
22+21+ |
SOT23 |
280000 |
全新进口原装现货QQ:505546343手机17621633780曹小姐 |
|||
ON/安森美 |
22+ |
SOT-23 |
25000 |
只有原装绝对原装,支持BOM配单! |
|||
CJ |
22+ |
SOT23 |
6868 |
全新正品现货 有挂就有现货 |
|||
NXP |
23+ |
SOT-23 |
9980 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
BC817-25规格书下载地址
BC817-25参数引脚图相关
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- BC81725
- BC817-16W-7
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- BC817-16LT3G
- BC817-16LT1G
- BC817-16-7-F
- BC817-16_R1_00001
- BC817-16.215
- BC817-16,235
- BC817-16,215
- BC817-16
- BC81716
- BC817.215
- BC817,235
- BC817,215
- BC817
- BC8-12
- BC808W
- BC808F
- BC808A
- BC80840MTF
- BC80840
- BC808-25LT1G
- BC80825
- BC80816
- BC808
- BC807W,115
- BC807W
- BC807UE6327HTSA1
- BC807U
- BC807S
- BC807RA
- BC807N3
- BC807K
- BC807F
- BC807DS
- BC807B
BC817-25数据表相关新闻
BC807G-SOT23.3R-40-TG_UTC代理商
BC807G-SOT23.3R-40-TG_UTC代理商
2023-2-2BC817-40
进口代理
2022-6-28BC817-40,215 SOT23 NXP/恩智浦 NPN三极管 原装正品
原装正品现货供应0755-28892389/13713856319;QQ:2639752116;微信:13713856319;
2021-3-26BC807-40LT1G技术参数 BC807-40LT1G批号:05+ 封装:SOT-23
BC807-40LT1G技术参数BC807-40LT1G批号:05+封装:SOT-23
2020-6-5BC807-40
BC807-40,全新原装当天发货或门市自取0755-82732291.
2019-11-19BC817-40
BC817-40,全新原装当天发货或门市自取0755-82732291.
2019-11-19
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