MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=30mMAX.(VGS=-10V,ID=-23A) RDS(on)2=43mMAX.(VGS=-4.0V,ID=-23A) ●LowCiss:Ciss=3300pFTYP. ●Built-ingateprotectiondiode

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

P-Channel60V(D-S)175째CMOSFET

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