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ZXTN25价格
参考价格：￥1.3698
型号：ZXTN25012EFHTA 品牌：Diodes 备注：这里有ZXTN25多少钱，2025年最近7天走势，今日出价，今日竞价，ZXTN25批发/采购报价，ZXTN25行情走势销售排行榜，ZXTN25报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
12V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex |   | ||
12V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
12V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
12V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 6V reverse blocking voltage Applications • MOSFET and IGBT gate driving | Zetex | | ||
12V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 6V reverse blocking voltage Applications • MOSFET and IGBT gate driving | DIODES 美台半导体 | | ||
12V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 6V reverse blocking voltage Applications • MOSFET and IGBT gate driving | Zetex | | ||
12V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 6V reverse blocking voltage Applications • MOSFET and IGBT gate driving | DIODES 美台半导体 | | ||
12V NPN high gain transistor Description Packaged in the SOT89 outline this new ultra high gain, low saturation 12V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions Features • 6.5A continuous current • Up to 15A peak current • | Zetex | | ||
12V NPN high gain transistor in SOT89 Features • BVCEO > 12V • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
12V NPN high gain transistor Description Packaged in the SOT89 outline this new ultra high gain, low saturation 12V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions Features • 6.5A continuous current • Up to 15A peak current • | Zetex | | ||
12V NPN high gain transistor in SOT89 Features • BVCEO > 12V • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
15V, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
15V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
15V, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
15V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
20V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
20V SOT23 NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss | Zetex | | ||
20V SOT23 NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss | DIODES 美台半导体 | | ||
20V SOT23 NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss | Zetex | | ||
20V SOT23 NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss | DIODES 美台半导体 | | ||
20V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi | DIODES 美台半导体 | | ||
20V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi | Zetex | | ||
20V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi | Zetex | | ||
20V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High gain • High peak curre | Zetex | | ||
20V NPN high gain transistor in SOT223 Features • BVCEX > 100V • BVCEO > 20V • BVECO > 6V • IC = 7A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT223 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Higher power dissipation SOT223 package • High gain • High peak curre | Zetex | | ||
20V NPN high gain transistor in SOT223 Features • BVCEX > 100V • BVCEO > 20V • BVECO > 6V • IC = 7A High Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT89 outline this new low saturation 20V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions Features • 6 Amps continuous current • Up to 15 Amps peak current • High curre | Zetex | | ||
20V NPN high gain transistor in SOT89 Features • BVCEO > 20V • IC = 6.0A Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN high gain transistor in SOT89 Features • BVCEO > 20V • IC = 6.0A Continuous Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
20V NPN high gain transistor Description Packaged in the SOT89 outline this new low saturation 20V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions Features • 6 Amps continuous current • Up to 15 Amps peak current • High curre | Zetex | | ||
40V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
40V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
40V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
40V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
40V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 130V forward blocking voltage • 6V reverse blocking voltage Application | DIODES 美台半导体 | | ||
40V, SOT23, NPN low power transistor Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 130V forward blocking voltage • 6V reverse blocking voltage Application | DIODES 美台半导体 | | ||
40V, SOT89, NPN medium power transistor Description Packaged in the SOT89 outline this new low saturation 40V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Extremely low equivalent on resistance; RCE(sat) = 36mΩ at 5A • 5A | Zetex | | ||
40V, SOT89, NPN medium power transistor Description Packaged in the SOT89 outline this new low saturation 40V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Extremely low equivalent on resistance; RCE(sat) = 36mΩ at 5A • 5A | DIODES 美台半导体 | | ||
40V, SOT89, NPN medium power transistor Description Packaged in the SOT89 outline this new low saturation 40V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Extremely low equivalent on resistance; RCE(sat) = 36mΩ at 5A • 5A | Zetex | | ||
40V, SOT89, NPN medium power transistor Description Packaged in the SOT89 outline this new low saturation 40V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Extremely low equivalent on resistance; RCE(sat) = 36mΩ at 5A • 5A | DIODES 美台半导体 | | ||
50V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
50V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
50V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
50V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | DIODES 美台半导体 | | ||
60V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
60V, SOT23, NPN medium power transistor Features • BVCEO > 60V • BVCEX > 150V • BVECO > 6V • IC = 3.5A high Continuous Collector Current • VCE(SAT) | DIODES 美台半导体 | | ||
60V, SOT23, NPN medium power transistor Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • High power dissip | Zetex | | ||
60V, SOT23, NPN medium power transistor Features • BVCEO > 60V • BVCEX > 150V • BVECO > 6V • IC = 3.5A high Continuous Collector Current • VCE(SAT) | DIODES 美台半导体 | | ||
60V, SOT89, NPN medium power transistor Description Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features • Extremely low equivalent on resistance; RCE(sat) = 46mΩ at 5A • 5 a | Zetex | | ||
60V, SOT89, NPN medium power transistor Features • BVCEO > 60V • IC = 5A Continuous Collector Current • Low Saturation Voltage VCE(sat) | DIODES 美台半导体 | | ||
60V NPN MEDIUM POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features • BVCEX > 150V • BVCEO > 60V • BVECO > 6V • IC = 5A Continuous Collector Current • VCE(sat) | DIODES 美台半导体 | |
ZXTN25产品属性
- 类型
描述
- 型号
ZXTN25
- 制造商
ZETEX
- 制造商全称
ZETEX
- 功能描述
12V, SOT23, NPN medium power transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIDDES |
23+ |
SOT23-3 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ZETEX |
2022+PB |
SOT-23 |
12000 |
||||
ZETEX |
24+ |
NA/ |
5511 |
原装现货,当天可交货,原型号开票 |
|||
DIODES/美台 |
25+ |
SOT-23 |
54648 |
百分百原装现货 实单必成 |
|||
ZETEX |
25+ |
SOT-23 |
48509 |
ZETEX全新特价ZXTN25012EFHTA即刻询购立享优惠#长期有货 |
|||
ZETEX |
23+ |
SOT-23 |
5500 |
原厂原装正品 |
|||
ZETEX |
新年份 |
SOT-23 |
12000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
DIODES/ZETEX |
22+ |
SOT23 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
DIODES/ZETEX |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
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DdatasheetPDF页码索引
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