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ZXTN25价格
参考价格：￥1.3698
型号：ZXTN25012EFHTA 品牌：Diodes 备注：这里有ZXTN25多少钱，2024年最近7天走势，今日出价，今日竞价，ZXTN25批发/采购报价，ZXTN25行情走势销售排行榜，ZXTN25报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
12V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 |  |   | |
12V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 |  | | |
12V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
12V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving | ZetexZetex Semiconductors 捷特科半导体 | | | |
12V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving | DIODESDiodes Incorporated 达尔科技 | | | |
12V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving | ZetexZetex Semiconductors 捷特科半导体 | | | |
12V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving | DIODESDiodes Incorporated 达尔科技 | | | |
12V NPN high gain transistor Description PackagedintheSOT89outlinethisnewultrahighgain,lowsaturation12VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features •6.5Acontinuouscurrent •Upto15Apeakcurrent • | ZetexZetex Semiconductors 捷特科半导体 | | | |
12V NPN high gain transistor in SOT89 Features •BVCEO>12V •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
12V NPN high gain transistor Description PackagedintheSOT89outlinethisnewultrahighgain,lowsaturation12VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features •6.5Acontinuouscurrent •Upto15Apeakcurrent • | ZetexZetex Semiconductors 捷特科半导体 | | | |
12V NPN high gain transistor in SOT89 Features •BVCEO>12V •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
15V, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
15V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
15V, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
15V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
20V SOT23 NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Higherpowerdiss | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V SOT23 NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Higherpowerdiss | DIODESDiodes Incorporated 达尔科技 | | | |
20V SOT23 NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Higherpowerdiss | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V SOT23 NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Higherpowerdiss | DIODESDiodes Incorporated 达尔科技 | | | |
20V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •100Vforwardblockingvoltage Applications •MOSFETandIGBTgatedrivi | DIODESDiodes Incorporated 达尔科技 | | | |
20V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •100Vforwardblockingvoltage Applications •MOSFETandIGBTgatedrivi | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •100Vforwardblockingvoltage Applications •MOSFETandIGBTgatedrivi | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •100Vforwardblockingvoltage Applications •MOSFETandIGBTgatedrivi | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highgain •Highpeakcurre | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V NPN high gain transistor in SOT223 Features •BVCEX>100V •BVCEO>20V •BVECO>6V •IC=7AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highgain •Highpeakcurre | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V NPN high gain transistor in SOT223 Features •BVCEX>100V •BVCEO>20V •BVECO>6V •IC=7AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT89outlinethisnewlowsaturation20VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features •6Ampscontinuouscurrent •Upto15Ampspeakcurrent •Highcurre | ZetexZetex Semiconductors 捷特科半导体 | | | |
20V NPN high gain transistor in SOT89 Features •BVCEO>20V •IC=6.0AContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor in SOT89 Features •BVCEO>20V •IC=6.0AContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT89outlinethisnewlowsaturation20VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features •6Ampscontinuouscurrent •Upto15Ampspeakcurrent •Highcurre | ZetexZetex Semiconductors 捷特科半导体 | | | |
40V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
40V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
40V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
40V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
40V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •130Vforwardblockingvoltage •6Vreverseblockingvoltage Application | DIODESDiodes Incorporated 达尔科技 | | | |
40V, SOT23, NPN low power transistor Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •130Vforwardblockingvoltage •6Vreverseblockingvoltage Application | DIODESDiodes Incorporated 达尔科技 | | | |
40V, SOT89, NPN medium power transistor Description PackagedintheSOT89outlinethisnewlowsaturation40VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •Extremelylowequivalentonresistance;RCE(sat)=36mΩat5A •5A | ZetexZetex Semiconductors 捷特科半导体 | | | |
40V, SOT89, NPN medium power transistor Description PackagedintheSOT89outlinethisnewlowsaturation40VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •Extremelylowequivalentonresistance;RCE(sat)=36mΩat5A •5A | DIODESDiodes Incorporated 达尔科技 | | | |
40V, SOT89, NPN medium power transistor Description PackagedintheSOT89outlinethisnewlowsaturation40VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •Extremelylowequivalentonresistance;RCE(sat)=36mΩat5A •5A | ZetexZetex Semiconductors 捷特科半导体 | | | |
40V, SOT89, NPN medium power transistor Description PackagedintheSOT89outlinethisnewlowsaturation40VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •Extremelylowequivalentonresistance;RCE(sat)=36mΩat5A •5A | DIODESDiodes Incorporated 达尔科技 | | | |
50V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
50V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
50V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
50V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | DIODESDiodes Incorporated 达尔科技 | | | |
60V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
60V, SOT23, NPN medium power transistor Features •BVCEO>60V •BVCEX>150V •BVECO>6V •IC=3.5AhighContinuousCollectorCurrent •VCE(SAT) | DIODESDiodes Incorporated 达尔科技 | | | |
60V, SOT23, NPN medium power transistor Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip | ZetexZetex Semiconductors 捷特科半导体 | | | |
60V, SOT23, NPN medium power transistor Features •BVCEO>60V •BVCEX>150V •BVECO>6V •IC=3.5AhighContinuousCollectorCurrent •VCE(SAT) | DIODESDiodes Incorporated 达尔科技 | | | |
60V, SOT89, NPN medium power transistor Description PackagedintheSOT89outlinethisnewlowsaturation60VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •Extremelylowequivalentonresistance;RCE(sat)=46mΩat5A •5a | ZetexZetex Semiconductors 捷特科半导体 | | | |
60V, SOT89, NPN medium power transistor Features •BVCEO>60V •IC=5AContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
60V NPN MEDIUM POWER TRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features •BVCEX>150V •BVCEO>60V •BVECO>6V •IC=5AContinuousCollectorCurrent •VCE(sat) | DIODESDiodes Incorporated 达尔科技 | | |
ZXTN25产品属性
- 类型
描述
- 型号
ZXTN25
- 制造商
ZETEX
- 制造商全称
ZETEX
- 功能描述
12V, SOT23, NPN medium power transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZETEX |
24+ |
SOT-23 |
45000 |
热卖优势现货 |
|||
DIODES |
2023 |
SOT-23 |
6000 |
公司原装现货/支持实单 |
|||
DIODES/美台 |
23+ |
SOT-23 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
DIODES(美台) |
23+ |
SOT23 |
6000 |
诚信服务，绝对原装原盘 |
|||
DIODES |
2023+ |
SOT-23 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
DIODES/美台 |
22+ |
NA |
5750 |
在途订单,请确认 |
|||
ZETEX |
22+ |
SOT-23 |
354000 |
||||
DIODES/美台 |
21+ |
NA |
3000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
DIODES/美台 |
1942+ |
SOT-23 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
DIODES/ZETEX |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
ZXTN25芯片相关品牌
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