20V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi

20V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi

NPN, 20V, 2A, SOT23

20V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi

20V, SOT23, NPN low power transistor

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. Features • High peak current • Low saturation voltage • 100V forward blocking voltage Applications • MOSFET and IGBT gate drivi

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Customer Specification

Construction Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA (25742), Web: www.alphawire.com Diameters (In) 1) Component 1 10 X 1 COND a) Conductor 24 (7/32) AWG Tinned Copper 0.024 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.044 (1) Color Code Alpha Wire

Capacitive Sensor

Features ■M30 × 1.5 threaded barrel ■Chrome-plated brass ■Fine adjustment via potentiometer ■DC 4-wire, 10…65 VDC ■Complementary contact, PNP output ■Cable connection Functional principle Capacitive proximity switches are designed for non-contact and wear-free detection of electrically c

SPI Serial EEPROMs

Description The AT25010/020/040 provides 1024/2048/4096 bits of serial electrically erasable programmable read only memory (EEPROM) organized as 128/256/512 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low voltage operati

SPI Serial EEPROM

Description The AT25010A/020A/040A provides 1024/2048/4096 bits of serial electrically erasable programmable read-only memory (EEPROM) organized as 128/256/512 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage oper

SPI Serial EEPROMs

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