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ZXTC价格
参考价格：￥1.3326
型号：ZXTC2045E6TA 品牌：Diodes 备注：这里有ZXTC多少钱，2025年最近7天走势，今日出价，今日竞价，ZXTC批发/采购报价，ZXTC行情走势销售排行榜，ZXTC报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual 40V complementary transistors in SOT23-6 Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package Applications • MOSFET and IGBT gate driving | Zetex |   | ||
Dual 40V complementary transistors in SOT23-6 Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe | DIODES 美台半导体 | | ||
Dual 40V complementary transistors in SOT23-6 Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package Applications • MOSFET and IGBT gate driving | Zetex | | ||
Dual 40V complementary transistors in SOT23-6 Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe | DIODES 美台半导体 | | ||
Dual 40V complementary transistors in SOT23-6 Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package Applications • MOSFET and IGBT gate driving | Zetex | | ||
Dual 40V complementary transistors in SOT23-6 Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe | DIODES 美台半导体 | | ||
12V, SOT23-6, complementary medium power transistors Description Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 12 (-12)V • BVEBO > 7 (-7)V • Continuous | DIODES 美台半导体 | | ||
12V, SOT23-6, complementary medium power transistors Description Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 12 (-12)V • BVEBO > 7 (-7)V • Continuous | DIODES 美台半导体 | | ||
40V, SOT23-6, complementary medium power transistors Description Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications. Features • NPN - PNP combination • Very low saturation voltage • High gain • SOT2 | Zetex | | ||
40V, SOT23-6, complementary medium power transistors Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 40 (-40)V • BVECO > 6 (-3)V • ICM = 9 (-9)A Pe | DIODES 美台半导体 | | ||
40V, SOT23-6, complementary medium power transistors Description Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications. Features • NPN - PNP combination • Very low saturation voltage • High gain • SOT2 | Zetex | | ||
40V, SOT23-6, complementary medium power transistors Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 40 (-40)V • BVECO > 6 (-3)V • ICM = 9 (-9)A Pe | DIODES 美台半导体 | | ||
COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage (500mV max @ 1A) • RSAT = 195mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-50 | DIODES 美台半导体 | | ||
COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR Features NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage (500mV max @ 1A) • RSAT = 195mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-50 | DIODES 美台半导体 | | ||
DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 45mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage (-1 | DIODES 美台半导体 | | ||
DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 45mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage (-1 | DIODES 美台半导体 | | ||
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation | DIODES 美台半导体 | | ||
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage (100mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation | DIODES 美台半导体 | | ||
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage (185mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -70V • IC = -2.5A Continuous Collector Current • Low Saturat | DIODES 美台半导体 | | ||
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage (185mV max @ 1A) • RSAT = 68mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -70V • IC = -2.5A Continuous Collector Current • Low Saturat | DIODES 美台半导体 | | ||
MPPS??Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also g | Zetex | | ||
MPPS Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also g | DIODES 美台半导体 | | ||
MPPS??Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also g | Zetex | | ||
MPPS Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also g | DIODES 美台半导体 | | ||
MPPS??Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also g | Zetex | | ||
MPPS Miniature Package Power Solutions 50V NPN LOW SATURATION TRANSISTOR DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also g | DIODES 美台半导体 | | ||
30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 文件：208 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
12V, SOT23-6, complementary medium power transistors 文件：733.26 Kbytes Page：8 Pages | Zetex | | ||
12V, SOT23-6, complementary medium power transistors 文件：449.81 Kbytes Page：8 Pages | Zetex | | ||
12V, SOT23-6, complementary medium power transistors 文件：449.81 Kbytes Page：8 Pages | Zetex | | ||
12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 文件：284.82 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
12V COMPLEMENTARY MEDIUM POWER TRANSISTOR 文件：414.67 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
12V, SOT23-6, complementary medium power transistors 文件：449.81 Kbytes Page：8 Pages | Zetex | | ||
12V, SOT23-6, complementary medium power transistors 文件：733.26 Kbytes Page：8 Pages | Zetex | | ||
12V COMPLEMENTARY MEDIUM POWER TRANSISTOR 文件：414.67 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
20V, SOT23-6, complementary medium power transistors 文件：494.23 Kbytes Page：8 Pages | Zetex | | ||
20V, SOT23-6, complementary medium power transistors 文件：505.58 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
Complementary, 20V, 4A, SOT26 | DIODES 美台半导体 | | ||
20V, SOT23-6, complementary medium power transistors 文件：352.13 Kbytes Page：8 Pages | Zetex | | ||
20V COMPLEMENTARY MEDIUM POWER TRANSISTORS IN SOT26 文件：262.51 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
20V, SOT23-6, complementary medium power transistors 文件：505.58 Kbytes Page：8 Pages | DIODES 美台半导体 | | ||
20V, SOT23-6, complementary medium power transistors 文件：352.13 Kbytes Page：8 Pages | Zetex | | ||
20V, SOT23-6, complementary medium power transistors 文件：494.23 Kbytes Page：8 Pages | Zetex | | ||
40V, SOT23-6, complementary medium power transistors 文件：520.22 Kbytes Page：8 Pages | Zetex | | ||
Complementary, 40V, 3.5A, SOT26 | DIODES 美台半导体 | | ||
40V, SOT23-6, complementary medium power transistors 文件：520.22 Kbytes Page：8 Pages | Zetex | | ||
40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 文件：474.99 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
40V, SOT23-6, complementary medium power transistors 文件：520.22 Kbytes Page：8 Pages | Zetex | | ||
Complementary, 40V, 2A, DFN3020-8 | DIODES 美台半导体 | | ||
COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR 文件：215.62 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN/PNP 40V 2A/1.5A 8DFN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 | DIODES 美台半导体 | | ||
COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR 文件：231.86 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS 文件：232.24 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
COMPLEMENTARY 20V LOW SATURATION TRANSISTORS 文件：231.51 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS 文件：232.24 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION 文件：225.79 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION 文件：235.14 Kbytes Page：9 Pages | DIODES 美台半导体 | | ||
封装/外壳：3-PowerSMD，引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 4A 3MLP/DFN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | |
ZXTC产品属性
- 类型
描述
- 型号
ZXTC
- 制造商
Diodes Incorporated
- 功能描述
TRANSISTOR NPN/PNP SOT23-6
- 制造商
Diodes Incorporated
- 功能描述
TRANSISTOR, NPN/PNP, SOT23-6
- 制造商
Diodes Incorporated
- 功能描述
TRANSISTOR, NPN & PNP, DUAL, 30V, 1.5A, 1.7W, SOT-23; Transistor
- Polarity
NPN/PNP; Collector Emitter Voltage
- V(br)ceo
30V; Power Dissipation
- Pd
1.7W; DC Collector
- Current
1.5A; DC Current Gain
- hFE
300; No. of
- Pins
6 ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
SOT-236 |
9600 |
原装现货,优势供应,支持实单! |
|||
TI |
24+ |
SO-20 |
8000 |
原装正品价格优势!欢迎询价QQ:385913858TEL:15 |
|||
DIODES/美台 |
23+ |
SOT-26 |
12700 |
买原装认准中赛美 |
|||
DIODES/美台 |
24+ |
SOT-26-6 |
3050 |
原装现货,专业配单专家 |
|||
DIODES |
18+ |
SOT23-6 |
85600 |
保证进口原装可开17%增值税发票 |
|||
DIODES/美台 |
21+ |
SOT-26-6 |
3050 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
DIODES(美台) |
24+ |
SOT-26 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
DIODES/美台 |
25 |
SOT-26 |
6000 |
原装正品 |
|||
DIODES/美台 |
25+ |
SOT26-6 |
32000 |
DIODES/美台全新特价ZXTC2045E6TA即刻询购立享优惠#长期有货 |
|||
Zetex Semiconductors |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
ZXTC芯片相关品牌
ZXTC规格书下载地址
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2019-1-13
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